SPD06N60C3 Infineon Technologies, SPD06N60C3 Datasheet - Page 8

• Manufacturer Part Number: SPD06N60C3
• Description: MOSFET N-CH 650V 6.2A TO-252
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPD06N60C3

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 750 mOhm @ 3.9A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 6.2A
• Vgs(th) (max) @ Id: 3.9V @ 260µA
• Gate Charge (qg) @ Vgs: 31nC @ 10V
• Input Capacitance (ciss) @ Vds: 620pF @ 25V
• Power - Max: 74W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.75 Ohm @ 10 V
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.2 A
• Power Dissipation: 74000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 6.2A
• Drain Source Voltage Vds: 650V
• On Resistance Rds(on): 750mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Fall Time: 10 ns
• Rise Time: 12 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000014696; SP000307394; SPD06N60C3; SPD06N60C3INTR; SPD06N60C3XT

Rev. 1.5
13 Drain-source breakdown voltage
V
15 Typ. C
E
BR(DSS)
oss
= f(V
700
660
620
580
540
5
4
3
2
1
0
=f(T
-60
0
DS
oss
)
j
); I
stored energy
100
-20
D
=0.25 mA
200
20
V
T
DS
j
300
60
[°C]
[V]
100
400
140
500
180
600
Page 8
14 Typ. capacitances
C =f(V
10
10
10
10
10
DS
4
3
2
1
0
); V
0
GS
=0 V; f =1 MHz
100
Crss
Coss
Ciss
200
V
DS
[V]
300
SPD06N60C3
400
2008-04-11
500