SPD06N60C3 Infineon Technologies, SPD06N60C3 Datasheet - Page 3

• Manufacturer Part Number: SPD06N60C3
• Description: MOSFET N-CH 650V 6.2A TO-252
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPD06N60C3

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 750 mOhm @ 3.9A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 6.2A
• Vgs(th) (max) @ Id: 3.9V @ 260µA
• Gate Charge (qg) @ Vgs: 31nC @ 10V
• Input Capacitance (ciss) @ Vds: 620pF @ 25V
• Power - Max: 74W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.75 Ohm @ 10 V
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.2 A
• Power Dissipation: 74000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 6.2A
• Drain Source Voltage Vds: 650V
• On Resistance Rds(on): 750mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Fall Time: 10 ns
• Rise Time: 12 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000014696; SP000307394; SPD06N60C3; SPD06N60C3INTR; SPD06N60C3XT

Rev. 1.5
1)
2)
3)
connection. PCB is vertical in still air.
4)
5)
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Effective output capacitance, energy
related
Effective output capacitance, time
related
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
7)
Pulse width limited by maximum temperature T
Repetitive avalanche causes additional power losses that can be calculated as P
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
C
C
I
Identical low-side and high-side switch.
SD
o(er)
o(tr)
<=I
is a fixed capacitance that gives the same charging time as C
4)
5)
is a fixed capacitance that gives the same stored energy as C
D
, di/dt<=400A/us, V
DClink
=400V, V
Symbol Conditions
C
C
C
C
C
t
t
t
t
Q
Q
Q
V
d(on)
r
d(off)
f
plateau
iss
oss
rss
o(er)
o(tr)
peak
gs
gd
g
<V
j,max
BR, DSS
V
f =1 MHz
V
to 480 V
V
V
R
V
V
only
GS
GS
DD
GS
DD
GS
Page 3
G
=12 Ω
=0 V, V
=0 V, V
=480 V,
=10 V, I
=480 V, I
=0 to 10 V
, T
j
<T
2
j,max
DS
DS
D
(one layer, 70 µm thick) copper area for drain
=6.2 A,
D
=25 V,
=0 V
=6.2 A,
oss
oss
.
while V
while V
DS
DS
min.
is rising from 0 to 80% V
AV
is rising from 0 to 80% V
-
-
-
-
-
-
-
-
-
-
-
-
-
=E
AR
*f.
Values
typ.
620
200
3.3
5.5
17
28
47
12
52
10
12
24
7
SPDT06N60C3
max.
31
-
-
-
-
-
-
-
-
-
-
-
-
2008-04-11
DSS.
DSS.
Unit
pF
ns
nC
V