NDB6020P Fairchild Semiconductor, NDB6020P Datasheet - Page 3
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NDB6020P
Manufacturer Part Number
NDB6020P
Description
MOSFET P-CH 20V 24A D2PAK
Manufacturer
Fairchild Semiconductor
Datasheet
1.NDB6020P.pdf
(6 pages)
Specifications of NDB6020P
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
50 mOhm @ 12A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
24A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
35nC @ 5V
Input Capacitance (ciss) @ Vds
1590pF @ 10V
Power - Max
60W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.005 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
24 A
Power Dissipation
60000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NDB6020P
NDB6020PTR
NDB6020PTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NDB6020P
Manufacturer:
FSC
Quantity:
12 000
Part Number:
NDB6020P
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Electrical Characteristics
Symbol
DRAIN-SOURCE DIODE CHARACTERISTICS
I
I
V
t
I
THERMAL CHARACTERISTICS
R
R
S
SM
rr
rr
Note:
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
SD
JC
JA
Parameter
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Current
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
(T
C
= 25°C unless otherwise noted)
Conditions
V
V
dI
GS
GS
F
/dt = 100 A/µs
= 0 V, I
= 0 V, I
S
F
= -12 A
= -24 A,
(Note 1)
Min
Typ
-1.1
-1.7
60
Max
62.5
-1.3
-24
-80
2.5
NDP6020P Rev.C1
Units
°C/W
°C/W
ns
A
A
V
A