NDB6020P Fairchild Semiconductor, NDB6020P Datasheet - Page 5
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NDB6020P
Manufacturer Part Number
NDB6020P
Description
MOSFET P-CH 20V 24A D2PAK
Manufacturer
Fairchild Semiconductor
Datasheet
1.NDB6020P.pdf
(6 pages)
Specifications of NDB6020P
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
50 mOhm @ 12A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
24A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
35nC @ 5V
Input Capacitance (ciss) @ Vds
1590pF @ 10V
Power - Max
60W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.005 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
24 A
Power Dissipation
60000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NDB6020P
NDB6020PTR
NDB6020PTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NDB6020P
Manufacturer:
FSC
Quantity:
12 000
Part Number:
NDB6020P
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Typical Electrical Characteristics
V
Figure 9. Capacitance Characteristics
GS
Figure 11. Switching Test Circuit
4 0 0 0
3 0 0 0
2 0 0 0
1 0 0 0
5 0 0
3 0 0
2 0 0
1 0 0
1 . 0 8
1 . 0 6
1 . 0 4
1 . 0 2
0 . 9 8
0 . 9 6
Figure 7. Breakdown Voltage Variation with
0 .1
1
- 5 0
I
f = 1 MHz
V
D
Temperature
R
GS
= -250µA
- 2 5
0 .2
GEN
= 0 V
-V
0
DS
T
V
J
0 .5
, DRAIN TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
IN
G
2 5
.
1
5 0
-V
D
S
7 5
DD
2
R
.
1 0 0
L
DUT
.
5
(continued)
1 2 5
C rss
C oss
C iss
1 0
1 5 0
V
O U T
1 7 5
2 0
V
0 .0 0 0 1
t
V
0 .0 0 1
O U T
d(on)
0 .0 1
8
6
4
2
0
IN
0 .1
2 0
1 0
Figure 10. Gate Charge Characteristics
0
Figure 8. Body Diode Forward Voltage
4
1
1 0 %
0
Figure 12. Switching Waveforms
I
D
V
= -24A
GS
Variation with Current and Temperature
= 0V
t
0 .2
-V
5 0 %
o n
1 0 %
SD
1 0
, BODY DIODE FORWARD VOLTAGE (V)
t
9 0 %
PULSE WIDTH
r
0 .4
Q
g
, GATE CHARGE (nC)
T = 125°C
J
0.6
t
2 0
d(off)
25°C
-55°C
5 0 %
0 .8
V
9 0 %
DS
.
t
= -5V
3 0
1 0 %
off
9 0 %
-15V
1
.
NDP6020P Rev.C1
INVERTED
t
f
-10V
1 .2
.
4 0