NDB6020P Fairchild Semiconductor, NDB6020P Datasheet - Page 6
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NDB6020P
Manufacturer Part Number
NDB6020P
Description
MOSFET P-CH 20V 24A D2PAK
Manufacturer
Fairchild Semiconductor
Datasheet
1.NDB6020P.pdf
(6 pages)
Specifications of NDB6020P
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
50 mOhm @ 12A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
24A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
35nC @ 5V
Input Capacitance (ciss) @ Vds
1590pF @ 10V
Power - Max
60W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.005 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
24 A
Power Dissipation
60000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NDB6020P
NDB6020PTR
NDB6020PTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NDB6020P
Manufacturer:
FSC
Quantity:
12 000
Part Number:
NDB6020P
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Typical Electrical Characteristics
Figure 13. Transconductance Variation with Drain
30
24
18
12
6
0
0.05
0.03
0.02
0.01
0
0.5
0.3
0.2
0.1
V
1
0.01
DS
Current and Temperature
0 . 0 1
= - 5V
0 . 0 5
0 . 0 2
0.1
Single Pulse
-5
0.2
D = 0.5
I , DRAIN CURRENT (A)
D
-10
0.1
Figure 15. Transient Thermal Response Curve.
-15
.
T = -55°C
J
125°C
25°C
(continued)
-20
1
-25
t ,TIME (m s)
1
100
60
30
10
5
3
2
1
1
R
Figure 14. Maximum Safe Operating Area
1 0
SINGLE PULSE
A
V
JC
T
GS
C
= 2.5 °C/W
2
= -4.5V
= 25°C
- V
DS
, DRAIN-SOURCE VOLTAGE (V)
P(pk)
5
T - T
R
Duty Cycle, D = t
J
1 0 0
R
JC
t
1
C
JC
(t) = r(t) * R
t
= P * R
2
= 2.5 °C/W
10
JC
1
/t
JC
(t)
2
NDP6020P Rev.C1
20
1 0 0 0
.
30