SPB17N80C3 Infineon Technologies, SPB17N80C3 Datasheet - Page 2

• Manufacturer Part Number: SPB17N80C3
• Description: MOSFET N-CH 800V 17A D2PAK
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPB17N80C3

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 290 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 3.9V @ 1mA
• Gate Charge (qg) @ Vgs: 177nC @ 10V
• Input Capacitance (ciss) @ Vds: 2300pF @ 100V
• Power - Max: 227W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.29 Ohm @ 10 V
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 17 A
• Power Dissipation: 208000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 17A
• Drain Source Voltage Vds: 800V
• On Resistance Rds(on): 290mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Fall Time: 6 ns
• Rise Time: 15 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000013370; SPB17N80C3INTR; SPB17N80C3T; SPB17N80C3XT; SPB17N80C3XTINTR; SPB17N80C3XTINTR

Rev. 2.3
Maximum ratings, at T
Parameter
Continuous diode forward current
Diode pulse current
Parameter
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction -
ambient
Soldering temperature, reflow
soldering, MSL1
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Avalanche breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
2)
j
=25 °C, unless otherwise specified
j
=25 °C, unless otherwise specified
Symbol Conditions
Symbol Conditions
I
I
R
R
T
V
V
V
I
I
R
R
S
S,pulse
DSS
GSS
sold
(BR)DSS
(BR)DS
GS(th)
thJC
thJA
DS(on)
G
T
SMD version, device
on PCB, minimal
footprint
SMD version, device
on PCB, 6 cm
area
1.6 mm (0.063 in.)
from case for 10 s
V
V
V
V
T
V
T
V
V
T
V
T
f =1 MHz, open drain
page 2
C
j
j
j
j
GS
GS
DS
DS
DS
GS
GS
GS
=25 °C
=150 °C
=25 °C
=150 °C
=25 °C
=V
=800 V, V
=800 V, V
=0 V, I
=0 V, I
=20 V, V
=10 V, I
=10 V, I
4)
GS
, I
D
D
D
=250 µA
=17 A
D
D
=1.0 mA
DS
=11 A,
=11 A,
2
GS
GS
=0 V
cooling
=0 V,
=0 V,
min.
800
2.1
-
-
-
-
-
-
-
-
-
-
-
Values
Value
0.25
0.67
0.85
typ.
870
150
17
51
35
3
-
-
-
-
-
-
SPB17N80C3
max.
0.55
0.29
260
100
3.9
62
25
-
-
-
-
-
-
Unit
A
Unit
K/W
°C
V
µA
nA
2007-11-28