SPB17N80C3 Infineon Technologies, SPB17N80C3 Datasheet - Page 5

• Manufacturer Part Number: SPB17N80C3
• Description: MOSFET N-CH 800V 17A D2PAK
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPB17N80C3

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 290 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 3.9V @ 1mA
• Gate Charge (qg) @ Vgs: 177nC @ 10V
• Input Capacitance (ciss) @ Vds: 2300pF @ 100V
• Power - Max: 227W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.29 Ohm @ 10 V
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 17 A
• Power Dissipation: 208000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 17A
• Drain Source Voltage Vds: 800V
• On Resistance Rds(on): 290mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Fall Time: 6 ns
• Rise Time: 15 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000013370; SPB17N80C3INTR; SPB17N80C3T; SPB17N80C3XT; SPB17N80C3XTINTR; SPB17N80C3XTINTR

Rev. 2.3
5 Typ. output characteristics
I
parameter: V
7 Drain-source on-state resistance
R
D
=f(V
DS(on)
0.8
0.6
0.4
0.2
35
30
25
20
15
10
DS
=f(T
0
5
0
-60
); T
0
j
); I
j
=150 °C
GS
D
-20
=11 A; V
5
20
98 %
4.5 V
GS
10
V
=10 V
T
5 V
DS
j
60
[°C]
typ
[V]
15
5.5 V
100
20
140
20 V
10 V
6 V
180
page 5
25
6 Typ. drain-source on-state resistance
R
parameter: V
8 Typ. transfer characteristics
I
parameter: T
D
DS(on)
=f(V
1.4
1.3
1.2
1.1
0.9
0.8
0.7
60
50
40
30
20
10
=f(I
GS
1
0
0
0
); |V
D
); T
GS
DS
j
j
4 V
|>2|I
=150 °C
2
5
D
|R
4.5 V
DS(on)max
4
V
I
D
GS
10
[A]
20 V
[V]
5 V
6
6 V
SPB17N80C3
15
10 V
25 °C
8
150 °C
6.5 V
2007-11-28
20
10