IPP100N10S3-05 Infineon Technologies, IPP100N10S3-05 Datasheet

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IPP100N10S3-05

Manufacturer Part Number
IPP100N10S3-05
Description
MOSFET N-CH 100V 100A T0220-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of IPP100N10S3-05

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5.1 mOhm @ 100A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
4V @ 240µA
Gate Charge (qg) @ Vgs
176nC @ 10V
Input Capacitance (ciss) @ Vds
11570pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000407126

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IPP100N10S3-05
Manufacturer:
INFINEON
Quantity:
4 000
Price:
Rev. 1.0
OptiMOS
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Avalanche current, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Type
IPB100N10S3-05
IPI100N10S3-05
IPP100N10S3-05
®
-T Power-Transistor
2)
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
j
=25 °C, unless otherwise specified
1)
2)
Symbol
I
I
E
I
V
P
T
D
D,pulse
AS
j
AS
GS
tot
, T
Marking
3PN1005
3PN1005
3PN1005
stg
T
T
V
T
I
T
D
C
C
C
C
GS
=50A
page 1
=25 °C, V
=100 °C,
=25 °C
=25 °C
PG-TO263-3-2
=10 V
Conditions
2)
GS
Product Summary
V
R
I
D
=10 V
DS
DS(on),max
IPI100N10S3-05, IPP100N10S3-05
PG-TO262-3-1
(SMD version)
-55 ... +175
55/175/56
Value
1445
100
100
400
100
±20
300
IPB100N10S3-05
PG-TO220-3-1
100
100
4.8
2008-02-11
Unit
A
mJ
A
V
W
°C
V
m
A

Related parts for IPP100N10S3-05

IPP100N10S3-05 Summary of contents

Page 1

... Symbol Conditions I T =25 ° =100 ° = =25 °C D,pulse =50A =25 °C tot stg page 1 IPB100N10S3-05 IPI100N10S3-05, IPP100N10S3-05 DS (SMD version) DS(on),max D PG-TO262-3-1 PG-TO220-3-1 Value =10 V 100 100 400 1445 100 ±20 300 -55 ... +175 55/175/56 100 V 4.8 m 100 A Unit °C 2008-02-11 ...

Page 2

... =240µA GS(th = DSS T =25 ° = =125 ° =20V, V =0V GSS =10V, I =100A DS(on =10V, I =100A SMD version page 2 IPB100N10S3-05 IPI100N10S3-05, IPP100N10S3-05 Values min. typ. max 0 100 - 2.0 3 100 - - 100 - 4.3 5.1 - 4.0 4.8 Unit K µ 2008-02-11 ...

Page 3

... S,pulse V =0V, I =80A =25° =50V /dt =100A/µ 0.5K/W the chip is able to carry 165A at 25°C. For detailed thJC 2 (one layer, 70 µm thick) copper area for drain page 3 IPB100N10S3-05 IPI100N10S3-05, IPP100N10S3-05 Values min. typ. max. - 8900 11570 pF - 2520 3276 - 220 - = 135 - 5.5 ...

Page 4

... V DS Rev. 1.0 2 Drain current 100 150 200 4 Max. transient thermal impedance Z = f(t thJC parameter µs 10 µ 100 µ 100 [V] page 4 IPB100N10S3-05 IPI100N10S3-05, IPP100N10S3- ≥ SMD 100 150 T [° 0.5 0.1 0.05 0.01 single pulse - [s] p 200 - 2008-02-11 ...

Page 5

... Typ. drain-source on-state resistance R = f(I DS(on) parameter 6 5 [V] 8 Typ. drain-source on-state resistance R = f(T DS(on) 8.5 7.5 6.5 5.5 4.5 3.5 -55 °C 2 [V] page 5 IPB100N10S3-05 IPI100N10S3-05, IPP100N10S3- °C; SMD 5 100 120 140 160 180 I [ 100 SMD -60 - 100 T [° 6 140 180 2008-02-11 ...

Page 6

... Rev. 1.0 10 Typ. capacitances C = f(V 10 1200 µ 100 140 180 12 Typ. avalanche characteristics parameter: T 1000 100 25 °C 25 ° 0.8 0 1.2 1.2 1.4 1.4 [V] [V] page 6 IPB100N10S3-05 IPI100N10S3-05, IPP100N10S3- MHz [ j(start) 150 °C 0 [µs] AV Ciss Coss Crss °C 100 °C 100 ...

Page 7

... Typ. gate charge 100 A pulsed GS gate D parameter gate Rev. 1.0 14 Typ. drain-source breakdown voltage V BR(DSS) 115 110 105 100 95 90 125 175 16 Gate charge waveforms s(th (th) 80 100 120 140 [nC] page 7 IPB100N10S3-05 IPI100N10S3-05, IPP100N10S3- -55 - 105 T [° 145 Q gate 2008-02-11 ...

Page 8

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 IPI100N10S3-05, IPP100N10S3-05 page 8 IPB100N10S3-05 2008-02-11 ...

Page 9

... Revision History Version Rev. 1.0 IPI100N10S3-05, IPP100N10S3-05 Date page 9 IPB100N10S3-05 Changes 2008-02-11 ...

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