FDS6679AZ Fairchild Semiconductor, FDS6679AZ Datasheet

MOSFET P-CH 30V 13A 8-SOIC

FDS6679AZ

Manufacturer Part Number
FDS6679AZ
Description
MOSFET P-CH 30V 13A 8-SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDS6679AZ

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
9.3 mOhm @ 13A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
13A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
96nC @ 10V
Input Capacitance (ciss) @ Vds
3845pF @ 15V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Single Quad Drain Triple Source
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.0093 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
13 A
Power Dissipation
2500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDS6679AZTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDS6679AZ
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDS6679AZ
0
Company:
Part Number:
FDS6679AZ
Quantity:
20 000
Company:
Part Number:
FDS6679AZ
Quantity:
100
Company:
Part Number:
FDS6679AZ
Quantity:
4 500
Part Number:
FDS6679AZ-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2009 Fairchild Semiconductor Corporation
FDS6679AZ Rev. B2
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
FDS6679AZ
P-Channel PowerTrench
-30V, -13A, 9mΩ
General Description
This P-Channel MOSFET is producted using Fairchild
Semiconductor’s advanced PowerTrench process that has
been
resistance.
This device is well suited for Power Management and load
switching applications common in Notebook Computers
and Portable Battery Packs.
V
V
I
P
T
R
R
D
DS
GS
D
J
θJA
θJC
Symbol
, T
Device Marking
STG
FDS6679AZ
especially tailored to minimize
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
Power Dissipation for Single Operation
Operating and Storage Temperature
Thermal Resistance , Junction to Ambient (Note 1a)
Thermal Resistance , Junction to Case (Note 1)
D
D
SO-8
D
D
-Pulsed
FDS6679AZ
S
Device
S
S
G
Parameter
T
the on-state
A
= 25°C unless otherwise noted
®
Reel Size
MOSFET
1
13’’
Features
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
6
7
8
5
Max r
Max r
Extended V
HBM ESD protection level of 6kV typical (note 3)
High performance trench technology for extremely low
r
High power and current handing capability
RoHS Compliant
DS(on)
DS(on)
DS(on)
GS
= 9.3mΩ at V
= 14.8mΩ at V
Tape Width
range (-25V) for battery applications
12mm
4
3
1
2
GS
GS
-55 to +150
= -10V, I
Ratings
= -4.5V, I
±25
-30
-13
-65
2.5
1.2
1.0
50
25
March 2009
D
www.fairchildsemi.com
= -13A
D
2500 units
Quantity
= -11A
Units
°C/W
°C/W
°C
W
V
V
A
tm

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FDS6679AZ Summary of contents

Page 1

... Thermal Resistance , Junction to Ambient (Note 1a) θJA R Thermal Resistance , Junction to Case (Note 1) θJC Package Marking and Ordering Information Device Marking Device FDS6679AZ FDS6679AZ ©2009 Fairchild Semiconductor Corporation FDS6679AZ Rev. B2 ® MOSFET Features Max r DS(on) Max r the on-state DS(on) Extended V HBM ESD protection level of 6kV typical (note 3) ...

Page 2

... Scale letter size paper 2: Pulse Test:Pulse Width <300µs, Duty Cycle <2.0% 3: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. ©2009 Fairchild Semiconductor Corporation FDS6679AZ Rev 25°C unless otherwise noted J Test Conditions I = -250µ ...

Page 3

... Normalized On Resistance vs Junction Temperature 70 PULSE DURATION = 80 µ DUTY CYCLE = 0.5%MAX 150 2.0 2.5 3 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2009 Fairchild Semiconductor Corporation FDS6679AZ Rev 25°C unless otherwise noted J 4.0 µ s 3.5 3 10V GS 2.5 2 3.5V 1 Figure 2. Normalized 30 20 ...

Page 4

... J 0.01 1E-3 1E (V) GS Figure -10V -4. AMBIENT TEMPERATURE A Figure 11. Maximum Continuous Drain Current vs Ambient Temperature ©2009 Fairchild Semiconductor Corporation FDS6679AZ Rev 25°C unless otherwise noted J 10000 1000 V = -15V DD = -20V 100 0.1 Figure Figure 10. GS 100 10 1 0.1 0.01 100 125 150 0. Figure 12 ...

Page 5

... Figure 13. 2 DUTY CYCLE-DESCENDING ORDER 0.5 0 0.1 0.05 0. 0.01 SINGLE PULSE - 125 θ Figure 14. Junction-to-Ambient Transient Thermal Response Curve ©2009 Fairchild Semiconductor Corporation FDS6679AZ Rev 25°C unless otherwise noted PULSE WIDTH (sec) Single Pulse Maximum Power Dissipation o C RECTANGULAR PULSE DURATION (sec - ...

Page 6

... Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2009 Fairchild Semiconductor Corporation FDS6679AZ Rev. B2 ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ QS™ Green FPS™ e-Series™ ...

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