IPB50N10S3L-16 Infineon Technologies, IPB50N10S3L-16 Datasheet - Page 2

• Manufacturer Part Number: IPB50N10S3L-16
• Description: MOSFET N-CH 100V 50A TO263-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPB50N10S3L-16

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 15.4 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 2.4V @ 60µA
• Gate Charge (qg) @ Vgs: 64nC @ 10V
• Input Capacitance (ciss) @ Vds: 4180pF @ 25V
• Power - Max: 100W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0154 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 100 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPB50N10S3L-16; IPB50N10S3L-16INTR; SP000386183

Rev. 1.0
Parameter
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction -
ambient, leaded
SMD version, device on PCB
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
1)
j
=25 °C, unless otherwise specified
Symbol
R
R
R
V
V
I
I
R
DSS
GSS
(BR)DSS
GS(th)
thJC
thJA
thJA
DS(on)
minimal footprint
6 cm
V
V
V
T
V
T
V
V
V
SMD version
V
V
SMD version
j
j
GS
DS
DS
DS
GS
GS
GS
GS
GS
=25 °C
=125 °C
page 2
=V
=80 V, V
=80 V, V
=0 V, I
=16V, V
=4.5V, I
=4.5V, I
=10 V, I
=10 V, I
2
Conditions
cooling area
GS
, I
2)
D
D
= 1 mA
D
D
D
D
DS
=60µA
GS
GS
=50A
=50A,
=50 A
=50 A,
=0V
=0 V,
=0 V,
2)
IPI50N10S3L-16, IPP50N10S3L-16
min.
100
1.2
-
-
-
-
-
-
-
-
-
-
-
Values
0.01
16.1
15.8
13.1
12.8
typ.
1.7
1
-
-
-
-
-
-
IPB50N10S3L-16
max.
20.9
20.6
15.7
15.4
100
100
1.5
2.4
62
62
40
1
-
2008-02-11
Unit
K/W
V
µA
nA
m