IPB50N10S3L-16 Infineon Technologies, IPB50N10S3L-16 Datasheet - Page 7

• Manufacturer Part Number: IPB50N10S3L-16
• Description: MOSFET N-CH 100V 50A TO263-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPB50N10S3L-16

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 15.4 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 2.4V @ 60µA
• Gate Charge (qg) @ Vgs: 64nC @ 10V
• Input Capacitance (ciss) @ Vds: 4180pF @ 25V
• Power - Max: 100W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0154 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 100 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPB50N10S3L-16; IPB50N10S3L-16INTR; SP000386183

Rev. 1.0
13 Typical avalanche energy
E
parameter: I
15 Typ. gate charge
V
parameter: V
AS
GS
= f(T
= f(Q
600
500
400
300
200
100
10
0
9
8
7
6
5
4
3
2
1
0
25
0
j
)
gate
12.5 A
25 A
50 A
D
); I
DD
D
= 50 A pulsed
10
75
20 V
Q
20
T
gate
j
[°C]
[nC]
125
80 V
30
40
175
page 7
14 Typ. drain-source breakdown voltage
V
16 Gate charge waveforms
BR(DSS)
Q
V
115
110
105
100
V
95
90
g (th)
g s(th)
GS
= f(T
-55
j
IPI50N10S3L-16, IPP50N10S3L-16
); I
Q
-15
g s
D
= 1 mA
25
Q
T
g
Q
j
[°C]
65
sw
Q
g d
IPB50N10S3L-16
105
2008-02-11
145
Q
gate