IPB50N10S3L-16 Infineon Technologies, IPB50N10S3L-16 Datasheet - Page 5

• Manufacturer Part Number: IPB50N10S3L-16
• Description: MOSFET N-CH 100V 50A TO263-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPB50N10S3L-16

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 15.4 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 2.4V @ 60µA
• Gate Charge (qg) @ Vgs: 64nC @ 10V
• Input Capacitance (ciss) @ Vds: 4180pF @ 25V
• Power - Max: 100W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0154 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 100 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPB50N10S3L-16; IPB50N10S3L-16INTR; SP000386183

Rev. 1.0
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
= f(V
= f(V
200
180
160
140
120
100
150
100
80
60
40
20
50
0
0
DS
GS
0
1
); T
); V
GS
j
j
DS
= 25 °C; SMD
= 6V
1
2
2
10 V
V
V
DS
GS
3
[V]
[V]
3
5 V
-55 °C
4
4
25 °C
175 °C
3.5 V
4.5 V
4 V
3 V
page 5
5
5
6 Typ. drain-source on-state resistance
R
parameter: V
8 Typ. drain-source on-state resistance
R
DS(on)
DS(on)
36
28
20
12
30
25
20
15
10
5
= f(I
= f(T
-60
0
3 V
D
j
); T
); I
GS
IPI50N10S3L-16, IPP50N10S3L-16
-20
D
20
j
= 25 °C; SMD
= 50 A; V
20
3.5 V
40
GS
T
I
D
j
60
= 10 V; SMD
[°C]
[A]
60
IPB50N10S3L-16
100
80
4 V
140
2008-02-11
4.5 V
10 V
5 V
100
180