FDD8880 Fairchild Semiconductor, FDD8880 Datasheet
FDD8880
Specifications of FDD8880
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FDD8880 Summary of contents
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... C Parameter = 10V) (Note 1) = 4.5V) (Note 10V, with C/ copper pad area Package Reel Size Tape Width TO-252AA 13” N April 2008 tm = 35A D = 35A Ratings Units Figure 0. -55 to 175 C o 2.73 C/W o 100 C C/W Quantity 12mm 2500 units FDD8880 Rev. B3 ...
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... 10V 35A 15A 35A, dI /dt = 100A 35A, dI /dt = 100A 27V 10V Min Typ Max 150 250 100 1.2 - 2.5 - 0.007 0.009 - 0.009 0.012 - 0.013 0.015 - 1260 - - 260 - - 150 - - 2 15V DD - 1.3 1.7 = 35A - 3 1.0mA - 2 5 147 - 108 - - 1. 1 Units FDD8880 Rev. B3 ...
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... Figure 2. Maximum Continuous Drain Current RECTANGULAR PULSE DURATION ( PULSE WIDTH (s) Figure 4. Peak Current Capability CURRENT LIMITED BY PACKAGE V = 10V 4. 100 125 150 CASE TEMPERATURE ( C) C Case Temperature NOTES: DUTY FACTOR PEAK FOR TEMPERATURES o ABOVE 25 C DERATE PEAK CURRENT AS FOLLOWS: 175 - 150 - FDD8880 Rev. B3 175 ...
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... Resistance vs Junction Temperature = (L)(I )/(1.3*RATED DSS (L/R)ln[(I *R)/(1.3*RATED +1] AS DSS DD o STARTING STARTING T = 150 TIME IN AVALANCHE (ms) AV Capability 10V PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 0.25 0.5 0. DRAIN TO SOURCE VOLTAGE ( 10V - 120 160 JUNCTION TEMPERATURE ( 1.0 = 35A 200 FDD8880 Rev. B3 ...
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... C) Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature OSS Figure 14. Gate Charge Waveforms for Constant I = 250 120 160 JUNCTION TEMPERATURE ( 15V DD WAVEFORMS IN DESCENDING ORDER 35A GATE CHARGE (nC) g Gate Current 200 25 FDD8880 Rev. B3 ...
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... Figure 19. Switching Time Test Circuit ©2008 Fairchild Semiconductor Corporation DUT I AS 0.01 0 Figure 16. Unclamped Energy Waveforms gs2 DD - DUT g(REF) 0 Figure 18. Gate Charge Waveforms d(ON 90 DUT V GS 50% 10% 0 Figure 20. Switching Time Waveforms BV DSS g(TOT g( g(TH OFF t d(OFF 10% 10% 90% 50% PULSE WIDTH FDD8880 Rev 10V 90% ...
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... C/ never exceeded (EQ 0.01 (0.0645 Figure 21. Thermal Resistance vs Mounting dissipation. Pulse (EQ. 2) Area in Inches Squared (EQ. 3) Area in Centimeters Squared R = 33.32+ 23.84/(0.268+Area) EQ 33.32+ 154/(1.73+Area) EQ (0.645) (6.45) (64. AREA, TOP COPPER AREA in (cm ) Pad Area FDD8880 Rev. B3 ...
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... PSPICE Electrical Model .SUBCKT FDD8880 rev April 2004 9.5e- 9.5e-10 Cin 6 8 1.15e-9 Dbody 7 5 DbodyMOD Dbreak 5 11 DbreakMOD Dplcap 10 5 DplcapMOD Ebreak 33.15 Eds Egs Esg Evthres Evtemp GATE Lgate 1 9 5.3e-9 Ldrain 2 5 1.0e-9 Lsource 3 7 1.7e-9 RLgate RLdrain ...
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... Fairchild Semiconductor Corporation DPLCAP 10 RSLC2 - 6 ESG 8 EVTHRES + + 19 LGATE EVTEMP 8 RGATE + RLGATE CIN S1A S2A S1B S2B EGS EDS LDRAIN 5 RLDRAIN RSLC1 51 ISCL DBREAK 50 RDRAIN 11 DBODY MWEAK EBREAK MMED + MSTRO 17 18 LSOURCE - 8 7 RSOURCE RLSOURCE RBREAK 17 18 RVTEMP VBAT RVTHRES DRAIN 2 SOURCE 3 FDD8880 Rev. B3 ...
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... RTHERM1 TH 6 1.44e-1 RTHERM2 6 5 1.9e-1 RTHERM3 5 4 3.0e-1 RTHERM4 4 3 4.0e-1 RTHERM5 3 2 5.7e-1 RTHERM6 2 TL 5.8e-1 SABER Thermal Model SABER thermal model FDD8880T template thermal_model th tl thermal_c th ctherm.ctherm1 th 6 =8e-4 ctherm.ctherm2 6 5 =1e-3 ctherm.ctherm3 5 4 =2.5e-3 ctherm.ctherm4 4 3 =2.6e-3 ctherm ...
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... Fairchild Semiconductor. The datasheet is for reference information only. The Power Franchise ® tm TinyBoost™ TinyBuck™ ® TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ ® UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ ® Definition ® Rev. I34 FDD8880 Rev. B3 ...