FDD8880 Fairchild Semiconductor, FDD8880 Datasheet - Page 4

• Manufacturer Part Number: FDD8880
• Description: MOSFET N-CH 30V 58A D-PAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD8880

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 35A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 58A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 31nC @ 10V
• Input Capacitance (ciss) @ Vds: 1260pF @ 15V
• Power - Max: 55W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.009 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 13 A
• Power Dissipation: 55000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Fall Time: 32 ns
• Rise Time: 91 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2008 Fairchild Semiconductor Corporation
Typical Characteristics
Figure 9. Drain to Source On Resistance vs Gate
Figure 5. Forward Bias Safe Operating Area
1000
80
60
40
20
100
0.1
0
10
1.5
25
20
15
10
1
5
1
2
Figure 7. Transfer Characteristics
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
V
DD
SINGLE PULSE
T
T
I
D
OPERATION IN THIS
J
C
LIMITED BY r
T
= 1A
= MAX RATED
= 15V
= 25
J
Voltage and Drain Current
= 175
AREA MAY BE
o
2.0
C
V
V
GS
V
o
I
DS
D
T
GS
C
J
, GATE TO SOURCE VOLTAGE (V)
= 35A
, DRAIN TO SOURCE VOLTAGE (V)
4
, GATE TO SOURCE VOLTAGE (V)
= 25
DS(ON)
o
C
2.5
6
10
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
3.0
T
C
T
J
= 25°C unless otherwise noted
= -55
8
o
3.5
C
1ms
10ms
10 s
100 s
DC
4.0
60
10
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 10. Normalized Drain to Source On
Figure 6. Unclamped Inductive Switching
500
100
80
60
40
20
10
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
1
0.01
Resistance vs Junction Temperature
0
Figure 8. Saturation Characteristics
-80
If R = 0
t
If R
t
AV
AV
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
= (L)(I
= (L/R)ln[(I
0
-40
V
GS
AS
V
DS
0.25
)/(1.3*RATED BV
T
STARTING T
= 10V
J
, DRAIN TO SOURCE VOLTAGE (V)
t
, JUNCTION TEMPERATURE (
AS
AV
0
, TIME IN AVALANCHE (ms)
*R)/(1.3*RATED BV
V
0.1
Capability
GS
= 5V
40
J
= 150
0.5
DSS
STARTING T
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80 s
o
- V
C
80
DD
DSS
)
V
V
GS
1
- V
GS
120
J
= 4V
DD
0.75
= 10V, I
= 25
o
) +1]
C)
o
T
V
C
C
GS
160
D
= 25
= 35A
FDD8880 Rev. B3
= 3V
o
C
200
1.0
10