FDD8880 Fairchild Semiconductor, FDD8880 Datasheet - Page 9

• Manufacturer Part Number: FDD8880
• Description: MOSFET N-CH 30V 58A D-PAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD8880

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 35A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 58A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 31nC @ 10V
• Input Capacitance (ciss) @ Vds: 1260pF @ 15V
• Power - Max: 55W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.009 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 13 A
• Power Dissipation: 55000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Fall Time: 32 ns
• Rise Time: 91 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2008 Fairchild Semiconductor Corporation
SABER Electrical Model
rev April 2004
template FDD8880 n2,n1,n3
electrical n2,n1,n3
{
var i iscl
dp..model dbodymod = (isl=2e-12,ikf=10,nl=1.01,rs=3.76e-3,trs1=8e-4,trs2=2e-7,cjo=4.8e-10,m=0.55,tt=1e-17,xti=2)
dp..model dbreakmod = (rs=0.2,trs1=1e-3,trs2=-8.9e-6)
dp..model dplcapmod = (cjo=5.5e-10,isl=10e-30,nl=10,m=0.45)
m..model mmedmod = (type=_n,vto=2.0,kp=10,is=1e-30, tox=1)
m..model mstrongmod = (type=_n,vto=2.5,kp=170,is=1e-30, tox=1)
m..model mweakmod = (type=_n,vto=1.69,kp=0.05,is=1e-30, tox=1,rs=0.1)
sw_vcsp..model s1amod = (ron=1e-5,roff=0.1,von=-4,voff=-3.5)
sw_vcsp..model s1bmod = (ron=1e-5,roff=0.1,von=-3.5,voff=-4)
sw_vcsp..model s2amod = (ron=1e-5,roff=0.1,von=-1.3,voff=-0.8)
sw_vcsp..model s2bmod = (ron=1e-5,roff=0.1,von=-0.8,voff=-1.3)
c.ca n12 n8 = 9.5e-10
c.cb n15 n14 = 9.5e-10
c.cin n6 n8 = 1.15e-9
dp.dbody n7 n5 = model=dbodymod
dp.dbreak n5 n11 = model=dbreakmod
dp.dplcap n10 n5 = model=dplcapmod
spe.ebreak n11 n7 n17 n18 = 33.15
spe.eds n14 n8 n5 n8 = 1
spe.egs n13 n8 n6 n8 = 1
spe.esg n6 n10 n6 n8 = 1
spe.evthres n6 n21 n19 n8 = 1
spe.evtemp n20 n6 n18 n22 = 1
i.it n8 n17 = 1
l.lgate n1 n9 = 5.3e-9
l.ldrain n2 n5 = 1.0e-9
l.lsource n3 n7 = 1.7e-9
res.rlgate n1 n9 = 53
res.rldrain n2 n5 = 10
res.rlsource n3 n7 = 17
m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u
m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u
m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u
res.rbreak n17 n18 = 1, tc1=8.3e-4,tc2=-8e-7
res.rdrain n50 n16 = 3.2e-3, tc1=1.8e-3,tc2=8e-6
res.rgate n9 n20 = 2.2
res.rslc1 n5 n51 = 1e-6, tc1=9e-4,tc2=1e-6
res.rslc2 n5 n50 = 1e3
res.rsource n8 n7 = 3.2e-3, tc1=5e-3,tc2=1e-6
res.rvthres n22 n8 = 1, tc1=-1e-3,tc2=-8.2e-6
res.rvtemp n18 n19 = 1, tc1=-2.6e-3,tc2=2e-7
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod
v.vbat n22 n19 = dc=1
equations {
i (n51->n50) +=iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/170))** 5))
}
}
GATE
1
RLGATE
LGATE
9
RGATE
CA
12
20
EVTEMP
+
S1A
S1B
ESG
18
22
EGS
13
8
+
-
-
13
6
8
10
+
+
-
-
14
13
6
6
8
RSLC2
S2A
S2B
DPLCAP
EVTHRES
+
EDS
19
8
15
CB
CIN
-
+
-
5
8
5
MSTRO
14
51
21
RDRAIN
RSLC1
50
ISCL
16
8
MMED
8
RSOURCE
DBREAK
IT
MWEAK
17
EBREAK
RVTHRES
RBREAK
11
+
-
17
18
7
+
18
-
22
RVTEMP
19
RLSOURCE
LSOURCE
VBAT
RLDRAIN
DBODY
LDRAIN
FDD8880 Rev. B3
SOURCE
DRAIN
2
3