FDD4141 Fairchild Semiconductor, FDD4141 Datasheet - Page 2

• Manufacturer Part Number: FDD4141
• Description: MOSFET P-CH 40V 10.8A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r
• Type: Power MOSFETr

Specifications of FDD4141

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12.3 mOhm @ 12.7A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 10.8A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Input Capacitance (ciss) @ Vds: 2775pF @ 20V
• Power - Max: 2.4W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 12.3 Ohm @ 10 V
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 10.8 A
• Power Dissipation: 2400 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 12.3Ohm
• Drain-source On-volt: 40V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: TO-252
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDD4141; FDD4141TR

©2007 Fairchild Semiconductor Corporation
FDD4141 Rev.C
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1: R
2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3: Starting T
BV
∆BV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
Q
V
t
Q
∆V
DSS
GSS
d(on)
r
d(off)
f
rr
DS(on)
FS
GS(th)
SD
iss
oss
rss
g
∆T
∆T
g
g
gs
gd
rr
R
Symbol
DSS
θJA
θJC
GS(th)
DSS
J
J
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
is guaranteed by design while R
J
= 25
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
°
C, L = 3mH, I
AS
= 15A, V
Parameter
θJA
DD
is determined by the user’s board design.
= 40V, V
T
a)
GS
J
= 25°C unless otherwise noted
1 in
= 10V.
52°C/W when mounted on a
2
pad of 2 oz copper
V
V
V
V
V
f = 1MHz
f = 1MHz
V
I
V
V
V
T
V
V
I
I
I
V
V
D
F
D
D
DD
GS
GS
GS
GS
GS
GS
GS
J
DS
DS
GS
DS
GS
= -12.7A, di/dt = 100A/µs
= -250µA, referenced to 25°C
= -250µA, V
= -250µA, referenced to 25°C
= 125°C
= 0V to -10V
= 0V to -5V
= -20V, V
= -20V, I
= -10V, R
= -5V, I
= 0V, I
= -32V, V
= V
= -10V, I
= -4.5V, I
= -10V, I
= ±20V, V
2
DS
Test Conditions
, I
S
D
D
D
= -12.7A
D
D
D
= -12.7A
GS
GEN
GS
= -250µA
GS
= -12.7A,
DS
= -12.7A
= -12.7A,
= -10.4A
= 0V,
= 0V
= 0V
= 0V
= 6Ω
V
I
D
DD
= -12.7A
= -20V,
(Note 2)
b)
100°C/W when mounted
on a minimum pad.
Min
-40
-1
2085
10.1
14.5
15.3
-0.8
-1.8
360
210
4.6
Typ
5.8
29
26
10
38
15
36
19
38
-29
7
7
8
2775
±100
12.3
18.0
18.7
-1.2
Max
480
310
19
13
60
27
50
27
44
40
-3
www.fairchildsemi.com
-1
mV/°C
mV/°C
Units
mΩ
nC
pF
pF
pF
nC
nC
nC
nC
µA
nA
ns
ns
ns
ns
ns
Ω
V
V
S
V