FDD4141 Fairchild Semiconductor, FDD4141 Datasheet - Page 5

• Manufacturer Part Number: FDD4141
• Description: MOSFET P-CH 40V 10.8A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r
• Type: Power MOSFETr

Specifications of FDD4141

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12.3 mOhm @ 12.7A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 10.8A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Input Capacitance (ciss) @ Vds: 2775pF @ 20V
• Power - Max: 2.4W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 12.3 Ohm @ 10 V
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 10.8 A
• Power Dissipation: 2400 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 12.3Ohm
• Drain-source On-volt: 40V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: TO-252
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDD4141; FDD4141TR

©2007 Fairchild Semiconductor Corporation
FDD4141 Rev.C
Typical Characteristics
0.005
0.01
0.1
2
1
10
-5
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
R
θ
JC
= 1.8
10
-4
o
C/W
T
Figure 13. Transient Thermal Response Curve
J
= 25°C unless otherwise noted
10
-3
t, RECTANGULAR PULSE DURATION (s)
5
10
-2
10
-1
NOTES:
DUTY FACTOR: D = t
PEAK T
J
= P
DM
x Z
P
θJC
10
DM
1
/t
x R
0
2
θJC
t
1
+ T
t
2
C
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10
1