FDD4141 Fairchild Semiconductor, FDD4141 Datasheet - Page 3

• Manufacturer Part Number: FDD4141
• Description: MOSFET P-CH 40V 10.8A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r
• Type: Power MOSFETr

Specifications of FDD4141

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12.3 mOhm @ 12.7A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 10.8A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Input Capacitance (ciss) @ Vds: 2775pF @ 20V
• Power - Max: 2.4W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 12.3 Ohm @ 10 V
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 10.8 A
• Power Dissipation: 2400 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 12.3Ohm
• Drain-source On-volt: 40V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: TO-252
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDD4141; FDD4141TR

©2007 Fairchild Semiconductor Corporation
FDD4141 Rev.C
Typical Characteristics
100
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
80
60
40
20
80
60
40
20
Figure 3. Normalized On- Resistance
-75
Figure 1.
0
0
1
Figure 5. Transfer Characteristics
0
V
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
DS
I
V
-50
D
GS
vs Junction Temperature
= -12.7A
= -5V
-V
= -10V
DS
-25
-V
T
1
On-Region Characteristics
J
, DRAIN TO SOURCE VOLTAGE (V)
GS
,
2
T
JUNCTION TEMPERATURE (
, GATE TO SOURCE VOLTAGE (V)
J
= 25
T
0
V
V
J
GS
GS
= 150
o
C
= -4.5V
= -10V
2
25
o
µ
C
s
3
50
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
T
T
J
J
3
= 25°C unless otherwise noted
= -55
75
o
C
100 125 150
4
o
V
V
V
C )
GS
GS
GS
4
= -3V
= -4V
= -3.5V
µ
s
5
5
3
1E-3
0.01
100
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.1
55
45
35
25
15
10
5
1
Figure 2.
Figure 4.
0.0
0
2
Forward Voltage vs Source Current
vs Drain Current and Gate Voltage
Figure 6.
V
V
GS
GS
-V
0.2
-V
SD
= 0V
= -3V
20
T
GS
, BODY DIODE FORWARD VOLTAGE (V)
Normalized On-Resistance
J
On-Resistance vs Gate to
, GATE TO SOURCE VOLTAGE (V)
= 150
-
4
Source Voltage
I
D
Source to Drain Diode
I
,
D
DRAIN CURRENT(A)
= -12.7A
0.4
V
o
C
GS
40
= -3.5V
0.6
6
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
T
T
J
J
= 125
= 25
60
V
GS
0.8
o
= -4V
C
o
V
C
GS
T
T
J
J
8
= -4.5V
= 25
= -55
V
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80
GS
1.0
o
= -10V
o
C
C
µ
µ
s
s
100
1.2
10