FQPF8N60C Fairchild Semiconductor, FQPF8N60C Datasheet - Page 2
![MOSFET N-CH 600V 7.5A TO-220F](/photos/5/31/53149/mfg_to-220f_desc_sml.jpg)
FQPF8N60C
Manufacturer Part Number
FQPF8N60C
Description
MOSFET N-CH 600V 7.5A TO-220F
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQP8N60C.pdf
(10 pages)
Specifications of FQPF8N60C
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.2 Ohm @ 3.75A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
7.5A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
36nC @ 10V
Input Capacitance (ciss) @ Vds
1255pF @ 25V
Power - Max
48W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.2 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
8.7 S
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
7.5 A
Power Dissipation
48000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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Company
Part Number
Manufacturer
Quantity
Price
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Part Number:
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24 000
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Part Number:
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Manufacturer:
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Quantity:
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FAIRCHILD
Quantity:
12 500
©2004 Fairchild Semiconductor Corporation
Electrical Characteristics
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 7.3mH, I
3. I
4. Pulse Test : Pulse width
5. Essentially independent of operating temperature
Off Characteristics
BV
/
I
I
I
On Characteristics
V
R
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain-Source Diode Characteristics and Maximum Ratings
I
I
V
t
Q
Symbol
DSS
GSSF
GSSR
d(on)
r
d(off)
f
S
SM
rr
SD
FS
BV
GS(th)
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
DSS
DSS
7.5A, di/dt
T
J
AS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
= 7.5 A, V
200A/ s, V
DD
300 s, Duty cycle
DD
= 50V, R
Parameter
BV
DSS,
G
= 25
Starting T
2%
Starting T
J
= 25°C
T
C
J
= 25°C unless otherwise noted
= 25°C
V
I
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
R
V
V
V
V
dI
D
GS
DS
DS
GS
GS
DS
GS
DS
DS
DD
DS
GS
GS
GS
G
F
= 250 A, Referenced to 25°C
/ dt = 100 A/ s
= 25
= 600 V, V
= 480 V, T
= V
= 40 V, I
= 25 V, V
= 480 V, I
= 0 V, I
= 30 V, V
= -30 V, V
= 10 V, I
= 300 V, I
= 10 V
= 0 V, I
= 0 V, I
Test Conditions
GS
, I
D
S
S
D
D
D
= 250 A
= 7.5 A
= 7.5 A,
GS
DS
D
D
= 250 A
DS
= 3.75 A
GS
C
= 3.75 A
= 7.5A,
= 7.5A,
= 125°C
= 0 V
= 0 V,
= 0 V
= 0 V
(Note 4, 5)
(Note 4, 5)
(Note 4)
(Note 4)
Min
600
2.0
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16.5
60.5
64.5
Typ
965
105
365
0.7
1.0
8.7
4.5
3.4
12
81
28
12
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1255
-100
Max
100
135
130
170
140
4.0
1.2
7.5
1.4
10
16
45
36
30
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1
Rev. B, March 2004
Units
V/°C
nA
nA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
A
A
V
C
A
A