FQPF8N60C Fairchild Semiconductor, FQPF8N60C Datasheet - Page 8

• Manufacturer Part Number: FQPF8N60C
• Description: MOSFET N-CH 600V 7.5A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQPF8N60C

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.2 Ohm @ 3.75A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 7.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 36nC @ 10V
• Input Capacitance (ciss) @ Vds: 1255pF @ 25V
• Power - Max: 48W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.2 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 8.7 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 7.5 A
• Power Dissipation: 48000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2004 Fairchild Semiconductor Corporation
Package Dimensions
[2.54
2.54TYP
1.27
0.20
0.10
]
ø3.60
10.00
9.90
(8.70)
0.20
0.10
0.20
[2.54
1.52
0.80
2.54TYP
0.10
0.20
0.10
TO-220
]
0.50
+0.10
–0.05
Dimensions in Millimeters
2.40
4.50
1.30
Rev. B, March 2004
+0.10
–0.05
0.20
0.20