FQPF8N60C Fairchild Semiconductor, FQPF8N60C Datasheet - Page 4

• Manufacturer Part Number: FQPF8N60C
• Description: MOSFET N-CH 600V 7.5A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQPF8N60C

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.2 Ohm @ 3.75A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 7.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 36nC @ 10V
• Input Capacitance (ciss) @ Vds: 1255pF @ 25V
• Power - Max: 48W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.2 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 8.7 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 7.5 A
• Power Dissipation: 48000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2004 Fairchild Semiconductor Corporation
Typical Characteristics
Figure 9-1. Maximum Safe Operating Area
10
10
8
6
4
2
0
1.2
1.1
1.0
0.9
0.8
10
10
10
25
-100
-1
-2
2
1
0
Figure 7. Breakdown Voltage Variation
10
0
Figure 10. Maximum Drain Current
-50
50
Operation in This Area
is Limited by R
vs Case Temperature
T
T
vs Temperature
V
J
C
, Junction Temperature [
10
for FQP8N60C
DS
, Case Temperature [ ]
0
DS(on)
1
, Drain-Source Voltage [V]
※
1. T
2. T
3. Single Pulse
75
Notes :
C
J
= 150
= 25
o
C
o
50
C
DC
100
100 ms
10
(Continued)
℃
10 ms
100
2
o
C]
1 ms
※
125
100 s
1. V
2. I
Notes :
D
GS
150
= 250 µA
= 0 V
10 s
10
150
3
200
Figure 9-2. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
10
10
10
10
-100
-1
-2
2
1
0
10
0
Figure 8. On-Resistance Variation
-50
T
for FQPF8N60C
V
J
vs Temperature
10
DS
, Junction Temperature [
0
1
, Drain-Source Voltage [V]
Operation in This Area
is Limited by R
DC
※
50
DS(on)
1. T
2. T
3. Single Pulse
Notes :
C
J
100 ms
= 150
= 25
10 ms
o
C
o
10
C
2
100
o
1 ms
C]
100 s
※
1. V
2. I
Notes :
150
D
GS
= 4 A
10 s
= 10 V
10
3
Rev. B, March 2004
200