FQPF8N60C Fairchild Semiconductor, FQPF8N60C Datasheet - Page 4
![MOSFET N-CH 600V 7.5A TO-220F](/photos/5/31/53149/mfg_to-220f_desc_sml.jpg)
FQPF8N60C
Manufacturer Part Number
FQPF8N60C
Description
MOSFET N-CH 600V 7.5A TO-220F
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQP8N60C.pdf
(10 pages)
Specifications of FQPF8N60C
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.2 Ohm @ 3.75A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
7.5A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
36nC @ 10V
Input Capacitance (ciss) @ Vds
1255pF @ 25V
Power - Max
48W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.2 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
8.7 S
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
7.5 A
Power Dissipation
48000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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Company
Part Number
Manufacturer
Quantity
Price
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©2004 Fairchild Semiconductor Corporation
Typical Characteristics
Figure 9-1. Maximum Safe Operating Area
10
10
8
6
4
2
0
1.2
1.1
1.0
0.9
0.8
10
10
10
25
-100
-1
-2
2
1
0
Figure 7. Breakdown Voltage Variation
10
0
Figure 10. Maximum Drain Current
-50
50
Operation in This Area
is Limited by R
vs Case Temperature
T
T
vs Temperature
V
J
C
, Junction Temperature [
10
for FQP8N60C
DS
, Case Temperature [ ]
0
DS(on)
1
, Drain-Source Voltage [V]
※
1. T
2. T
3. Single Pulse
75
Notes :
C
J
= 150
= 25
o
C
o
50
C
DC
100
100 ms
10
(Continued)
℃
10 ms
100
2
o
C]
1 ms
※
125
100 s
1. V
2. I
Notes :
D
GS
150
= 250 µA
= 0 V
10 s
10
150
3
200
Figure 9-2. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
10
10
10
10
-100
-1
-2
2
1
0
10
0
Figure 8. On-Resistance Variation
-50
T
for FQPF8N60C
V
J
vs Temperature
10
DS
, Junction Temperature [
0
1
, Drain-Source Voltage [V]
Operation in This Area
is Limited by R
DC
※
50
DS(on)
1. T
2. T
3. Single Pulse
Notes :
C
J
100 ms
= 150
= 25
10 ms
o
C
o
10
C
2
100
o
1 ms
C]
100 s
※
1. V
2. I
Notes :
150
D
GS
= 4 A
10 s
= 10 V
10
3
Rev. B, March 2004
200