HUFA75429D3ST Fairchild Semiconductor, HUFA75429D3ST Datasheet - Page 5

• Manufacturer Part Number: HUFA75429D3ST
• Description: MOSFET N-CH 60V 20A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of HUFA75429D3ST

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 25 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 85nC @ 20V
• Input Capacitance (ciss) @ Vds: 1090pF @ 25V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.021 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 20 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 33 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 39 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2003 Fairchild Semiconductor Corporation
Typical Characteristics
Test Circuits and Waveforms
VARY t
REQUIRED PEAK I
Breakdown Voltage vs Junction Temperature
0V
Figure 14. Unclamped Energy Test Circuit
1.2
1.1
1.0
0.9
Figure 11. Normalized Drain to Source
P
-80
TO OBTAIN
I
V
D
t
GS
P
= 250 A
-40
AS
T
J
, JUNCTION TEMPERATURE (
0
Figure 13. Gate Charge Waveforms for Constant Gate Currents
R
G
40
10
80
8
6
4
2
0
0
T
A
V
V
= 25°C unless otherwise noted
I
AS
120
DS
DD
o
C)
= 30V
DUT
0.01
L
160
10
Q
+
-
g
V
, GATE CHARGE (nC)
DD
200
20
0
3000
1000
WAVEFORMS IN
DESCENDING ORDER:
Figure 12. Capacitance vs Drain to Source
Figure 15. Unclamped Energy Waveforms
100
50
0.1
I
I
D
D
= 20A
= 4A
C
V
30
RSS
GS
= 0V, f = 1MHz
V
DS
C
C
, DRAIN TO SOURCE VOLTAGE (V)
GD
OSS
I
AS
C
t
Voltage
40
DS
1
P
+ C
GD
BV
t
AV
DSS
C
ISS
10
V
C
DS
GS
+ C
GD
V
DD
60
Rev. A1