FDS4675 Fairchild Semiconductor, FDS4675 Datasheet
FDS4675
Manufacturer Part Number
FDS4675
Description
MOSFET P-CH 40V 11A 8SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDS4675.pdf
(5 pages)
Specifications of FDS4675
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
13 mOhm @ 11A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
56nC @ 4.5V
Input Capacitance (ciss) @ Vds
4350pF @ 20V
Power - Max
1.2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDS4675
FDS4675TR
FDS4675TR
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FDS4675
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Fairchild Semiconductor
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FDS4675
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F/C
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Part Number:
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15 000
Part Number:
FDS4675-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDS4675
40V P-Channel PowerTrench MOSFET
General Description
This P -Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gave drive
voltage ratings (4.5V – 20V).
Applications
2001 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
R
Package Marking and Ordering Information
D
Power management
Load switch
Battery protection
D
J
DSS
GSS
, T
JA
JA
J C
Device Marking
STG
FDS4675
SO-8
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
D
D
Pin 1
D
D
SO-8
D
D
– Continuous
– Pulsed
D
FDS4675
D
Device
Parameter
S
S
S
S
S
S
G
G
T
A
=25
o
C unless otherwise noted
Reel Size
13’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1a)
(Note 1c)
(Note 1)
Features
–11 A, –40 V
Fast switching speed
High performance trench technology for extremely
low R
High power and current handling capability
DS(ON)
62.5 (steady state), 50 (10 sec)
5
6
7
8
Tape width
2.4 (steady state)
-55 to +175
12mm
R
R
Ratings
DS(ON)
DS(ON)
–
–
–
125
1.4
1.2
25
40
20
11
50
= 0.013
= 0.017
February 2001
4
3
2
1
@ V
@ V
FDS4675 Rev C(W)
2500 units
GS
GS
Quantity
= –10 V
= –4.5 V
Units
C/W
C/W
C/W
W
V
V
A
C
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FDS4675 Summary of contents
Page 1
... Reel Size 13’’ February 2001 R = 0.013 @ V = –10 V DS(ON 0.017 @ V = –4.5 V DS(ON Ratings Units – – – 50 2.4 (steady state) W 1.4 1.2 -55 to +175 C C/W 125 C/W 25 C/W Tape width Quantity 12mm 2500 units FDS4675 Rev C(W) ...
Page 2
... Min Typ Max Units –40 V –34 mV/ C –1 100 nA –100 nA –1 –1.4 –3 V 4.6 mV – 4350 pF 622 pF 290 152 –2.1 A –0.7 –1.2 V (Note 2) c) 125°C/W when mounted on a minimum pad. FDS4675 Rev C(W) A ...
Page 3
... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. -3.5V -4.0V -4.5V -6.0V -10V DIRAIN CURRENT ( -5. 125 2.5 3 3 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDS4675 Rev C( 1.4 ...
Page 4
... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec MHz ISS C OSS C RSS DRAIN TO SOURCE VOLTAGE ( SINGLE PULSE R = 125°C 25°C A 0.01 0 TIME (sec) 1 Power Dissipation. R ( 125 C/W JA P(pk ( Duty Cycle 100 1000 FDS4675 Rev C(W) 40 100 ...
Page 5
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ISOPLANAR™ ...