FDS4675 Fairchild Semiconductor, FDS4675 Datasheet - Page 4

• Manufacturer Part Number: FDS4675
• Description: MOSFET P-CH 40V 11A 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS4675

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 56nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 4350pF @ 20V
• Power - Max: 1.2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS4675; FDS4675TR

Typical Characteristics
5
4
3
2
1
0
0.01
100
0.1
10
0
Figure 9. Maximum Safe Operating Area.
1
Figure 7. Gate Charge Characteristics.
0.1
I
R
D
0.001
DS(ON)
SINGLE PULSE
0.01
= -11A
R
0.1
V
JA
0.0001
T
1
GS
A
= 125
LIMIT
= 25
= -4.5V
10
o
o
C/W
C
D = 0.5
-V
0.2
D S
0.1
0.05
, DRAIN-SOURCE VOLTAGE (V)
0.02
Q
g
1
0.01
SINGLE PULSE
, GATE CHARGE (nC)
20
0.001
DC
10s
Figure 11. Transient Thermal Response Curve.
V
1s
DS
30
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
100ms
= -10V
10
10ms
0.01
1ms
40
-30V
100 s
-20V
100
50
0.1
t
1
, TIME (sec)
6000
5000
4000
3000
2000
1000
50
40
30
20
10
0
0.001
0
Figure 8. Capacitance Characteristics.
0
1
Figure 10. Single Pulse Maximum
0.01
-V
Power Dissipation.
D S
10
, DRAIN TO SOURCE VOLTAGE (V)
10
C
C
C
0.1
ISS
t
OSS
RSS
1
, TIME (sec)
20
P(pk)
Duty Cycle, D = t
T
1
R
J
R
JA
- T
100
JA
(t) = r(t) + R
A
t
= 125
1
= P * R
SINGLE PULSE
t
R
2
30
JA
T
A
o
= 125°C/W
10
C/W
= 25°C
FDS4675 Rev C(W)
JA
f = 1 MHz
V
1
(t)
GS
JA
/ t
2
= 0 V
1000
100
40