FDB44N25TM Fairchild Semiconductor, FDB44N25TM Datasheet

FDB44N25TM

Manufacturer Part Number

FDB44N25TM

Description

MOSFET N-CH 250V 44A D2PAK

Manufacturer

Fairchild Semiconductor

Series

UniFET™r

Datasheet

1.FDB44N25TM.pdf (8 pages)

Specifications of FDB44N25TM

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

69 mOhm @ 22A, 10V

Drain To Source Voltage (vdss)

250V

Current - Continuous Drain (id) @ 25° C

44A

Vgs(th) (max) @ Id

5V @ 250µA

Gate Charge (qg) @ Vgs

61nC @ 10V

Input Capacitance (ciss) @ Vds

2870pF @ 25V

Power - Max

307W

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (2 leads + tab)

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.069 Ohms @ 10 V

Forward Transconductance Gfs (max / Min)

32 S

Drain-source Breakdown Voltage

250 V

Gate-source Breakdown Voltage

+/- 30 V

Continuous Drain Current

44 A

Power Dissipation

307 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

FDB44N25TMTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

FDB44N25TM

Manufacturer:

FAIRCHILD

Quantity:

12 500

Current page: 1 of 8
Download datasheet (723Kb)

FDB44N25 Rev A

FDB44N25

250V N-Channel MOSFET

Features

• 44A, 250V, R

• Low gate charge ( typical 47 nC)

• Low C

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

Absolute Maximum Ratings

Thermal Characteristics

* When mounted on the minimum pad size recommended (PCB Mount)

dv/dt

DSS

GSS

Symbol

θJC

θJA

STG

rss

( typical 60 pF)

DS(on)

Drain-Source Voltage

Drain Current

Gate-Source voltage

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient*

Thermal Resistance, Junction-to-Ambient

Operating and Storage Temperature Range

= 0.069Ω @V

= 10 V

- Continuous (T

- Pulsed

- Derate above 25°C

Parameter

= 25°C)

= 100°C)

Description

These N-Channel enhancement mode power field effect transis-

tors are produced using Fairchild’s proprietary, planar stripe,

DMOS technology.

This advanced technology has been especially tailored to mini-

mize on-state resistance, provide superior switching perfor-

mance, and withstand high energy pulse in the avalanche and

commutation mode. These devices are well suited for high effi-

cient switched mode power supplies and active power factor

correction.

(Note 2)

(Note 1)

(Note 3)

(Note 1)

Min.

FDB44N25

-55 to +150

2055

26.4

30.7

2.45

250

176

±30

307

300

4.5

UniFET

Max.

0.41

62.5

September 2005

www.fairchildsemi.com

Unit

W/°C

V/ns

Unit

°C/W

°C

Related parts for FDB44N25TM

FDB44N25TM Summary of contents

Page 1

... Thermal Resistance, Junction-to-Ambient* θJA R Thermal Resistance, Junction-to-Ambient θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2005 Fairchild Semiconductor Corporation FDB44N25 Rev A Description = 10 V These N-Channel enhancement mode power field effect transis- GS tors are produced using Fairchild’s proprietary, planar stripe, DMOS technology ...

Page 2

... Package Marking and Ordering Information Device Marking Device FDB44N25 FDB44N25TM Electrical Characteristics Symbol Parameter Off Characteristics BV Drain-Source Breakdown Voltage DSS ∆BV Breakdown Voltage Temperature DSS ∆T / Coefficient J I Zero Gate Voltage Drain Current DSS I Gate-Body Leakage Current, Forward GSSF I Gate-Body Leakage Current, Reverse ...

Page 3

Typical Performance Characteristics Figure 1. On-Region Characteristics V GS Top : 15 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5 Drain-Source ...

Page 4

Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 1.1 1.0 0.9 0.8 -100 - Junction Temperature [ J Figure 9. Maximum Safe Operating Area Operation in This Area ...

Page 5

3mA 3mA 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V FDB44N25 ...

Page 6

Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FDB44N25 Rev A Peak Diode Recovery ...

Page 7

Mechanical Dimensions FDB44N25 Rev A D2-PAK 7 www.fairchildsemi.com ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. FAST ® ACEx™ ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ ...

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