FDB44N25TM Fairchild Semiconductor, FDB44N25TM Datasheet - Page 3

• Manufacturer Part Number: FDB44N25TM
• Description: MOSFET N-CH 250V 44A D2PAK
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDB44N25TM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 69 mOhm @ 22A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 44A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 61nC @ 10V
• Input Capacitance (ciss) @ Vds: 2870pF @ 25V
• Power - Max: 307W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.069 Ohms @ 10 V
• Forward Transconductance Gfs (max / Min): 32 S
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 44 A
• Power Dissipation: 307 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDB44N25TMTR

FDB44N25 Rev A
Typical Performance Characteristics
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
Figure 1. On-Region Characteristics
10
10
10
2
1
0
10
6000
5000
4000
3000
2000
1000
Drain Current and Gate Voltage
-1
Top :
Bottom :
0.125
0.100
0.075
0.050
0.025
0.000
0
10
-1
0
15.0 V
10.0 V
5.5 V
8.0 V
7.0 V
6.5 V
6.0 V
V
GS
25
V
DS
C
C
C
oss
rss
iss
, Drain-Source Voltage [V]
V
DS
10
, Drain-Source Voltage [V]
0
50
10
I
0
D
, Drain Current [A]
V
GS
75
= 10V
100
C
C
C
iss
oss
rss
10
= C
= C
= C
V
1
10
1. 250µ s Pulse Test
2. T
GS
Notes :
gs
gd
ds
1
= 20V
+ C
+ C
C
= 25
Note : T
gd
gd
(C
125
1. V
2. f = 1 MHz
℃
Note ;
ds
= shorted)
J
GS
= 25
= 0 V
℃
150
3
10
10
10
10
10
10
12
10
8
6
4
2
0
2
1
0
Figure 4. Body Diode Forward Voltage
2
1
0
0.2
Figure 6. Gate Charge Characteristics
0
2
Figure 2. Transfer Characteristics
0.4
Variation vs. Source Current
10
25
4
o
150
C
150
0.6
o
C
V
Q
V
and Temperatue
SD
G
GS
20
, Total Gate Charge [nC]
, Source-Drain voltage [V]
, Gate-Source Voltage [V]
25
0.8
V
V
V
6
DS
DS
DS
= 125V
= 50V
= 200V
30
1.0
-55
o
C
1.2
8
40
1. V
2. 250µ s Pulse Test
1.4
Notes :
Note : I
1. V
2. 250µ s Pulse Test
GS
Notes :
= 0V
DS
50
10
D
= 40V
= 44A
1.6
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1.8
12