FDB44N25TM Fairchild Semiconductor, FDB44N25TM Datasheet - Page 2

• Manufacturer Part Number: FDB44N25TM
• Description: MOSFET N-CH 250V 44A D2PAK
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDB44N25TM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 69 mOhm @ 22A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 44A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 61nC @ 10V
• Input Capacitance (ciss) @ Vds: 2870pF @ 25V
• Power - Max: 307W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.069 Ohms @ 10 V
• Forward Transconductance Gfs (max / Min): 32 S
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 44 A
• Power Dissipation: 307 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDB44N25TMTR

FDB44N25 Rev A
Package Marking and Ordering Information
Electrical Characteristics
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 1.7mH, I
3. I
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Off Characteristics
BV
∆BV
/
I
I
I
On Characteristics
V
R
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain-Source Diode Characteristics and Maximum Ratings
I
I
V
t
Q
Device Marking
Symbol
DSS
GSSF
GSSR
d(on)
r
d(off)
f
S
SM
rr
FS
GS(th)
SD
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
DSS
∆T
≤ 44A, di/dt ≤ 200A/µs, V
DSS
FDB44N25
J
AS
= 44A, V
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
DD
= 50V, R
DD
≤ BV
FDB44N25TM
Parameter
Device
G
DSS
= 25Ω, Starting T
, Starting T
J
= 25°C
T
J
C
= 25°C
= 25°C unless otherwise noted
Package
D2-PAK
V
I
V
V
V
V
V
V
V
V
f = 1.0MHz
V
R
V
V
V
V
dI
D
GS
DS
DS
GS
GS
DS
GS
DS
DS
DD
DS
GS
GS
GS
G
F
= 250µA, Referenced to 25°C
/dt =100A/µs
= 25Ω
= 250V, V
= 200V, T
= V
= 40V, I
= 25V, V
= 200V, I
= 0V, I
= 30V, V
= -30V, V
= 10V, I
= 125V, I
= 10V
= 0V, I
= 0V, I
GS
2
, I
D
S
S
D
D
D
Conditions
= 44A
= 44A
= 250µA
DS
GS
D
D
DS
C
= 22A
GS
= 22A
= 250µA
= 44A
= 44A
Reel Size
= 125°C
= 0V
= 0V,
= 0V
= 0V
330mm
(Note 4, 5)
(Note 4, 5)
(Note 4)
(Note 4)
Tape Width
24mm
Min.
250
3.0
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Typ.
0.058
2210
0.25
450
400
115
195
1.8
18
24
32
60
55
85
47
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Quantity
Max Units
0.069
2870
-100
www.fairchildsemi.com
100
585
120
810
180
240
176
5.0
1.4
10
90
61
44
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1
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800
V/°C
nC
nC
nC
µC
µA
µA
nA
nA
pF
pF
pF
ns
ns
ns
ns
ns
V
V
Ω
S
A
A
V