FDPF5N50NZF Fairchild Semiconductor, FDPF5N50NZF Datasheet

MOSFET N-CH 500V 4.2A TO-220F

FDPF5N50NZF

Manufacturer Part Number
FDPF5N50NZF
Description
MOSFET N-CH 500V 4.2A TO-220F
Manufacturer
Fairchild Semiconductor
Series
UniFET-II™r
Datasheet

Specifications of FDPF5N50NZF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.75 Ohm @ 2.1A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
4.2A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
12nC @ 10V
Input Capacitance (ciss) @ Vds
485pF @ 25V
Power - Max
30W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.57 Ohms
Forward Transconductance Gfs (max / Min)
4.2 S
Drain-source Breakdown Voltage
500 V
Continuous Drain Current
2.5 A to 4.2 A
Power Dissipation
30 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Gate Charge Qg
9 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDPF5N50NZF
Manufacturer:
Fairchi/ON
Quantity:
17 401
©2010 Fairchild Semiconductor Corporation
FDP5N50NZF / FDPF5N50NZF Rev. A
MOSFET Maximum Ratings
Thermal Characteristics
V
V
I
I
E
I
E
dv/dt
P
T
T
*Drain current limited by maximum junction temperature
R
R
R
D
DM
AR
FDP5N50NZF / FDPF5N50NZF
N-Channel MOSFET
500V, 4.2A, 1.75
Features
• R
• Low Gate Charge ( Typ. 9nC)
• Low C
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Imoroved Capability
• RoHS Compliant
J
L
DSS
GSS
AS
AR
D
JC
CS
JA
, T
Symbol
Symbol
DS(on)
STG
rss
= 1.57 ( Typ.)@ V
( Typ. 4pF)
G D S
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Heat Sink Typ.
Thermal Resistance, Junction to Ambient
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
GS
TO-220
FDP Series
= 10V, I
D
Parameter
Parameter
= 2.1A
T
-Continuous (T
-Continuous (T
- Pulsed
(T
- Derate above 25
C
C
= 25
= 25
o
G
C unless otherwise noted*
o
C)
D
S
C
C
= 25
= 100
o
C
o
C)
o
1
C)
(Note 3)
TO-220F
FDPF Series
(potted)
(Note 1)
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advance technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switching mode power supplies and active power factor
correction.
(Note 2)
( Note 1)
(Note 1)
FDP5N50NZF
FDP5N50NZF
0.62
62.5
4.2
2.5
16
78
1.6
0.5
-55 to +150
G
G
500
±25
165
300
4.2
7.8
15
FDPF5N50NZF
FDPF5N50NZF
0.24
62.5
4.2*
2.5*
16*
4.1
30
UniFET-II
-
February 2010
D
D
S
S
www.fairchildsemi.com
Units
Units
W/
o
V/ns
C/W
mJ
mJ
o
o
W
V
V
A
A
A
C
C
o
C
TM
tm

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FDPF5N50NZF Summary of contents

Page 1

... R Thermal Resistance, Case to Heat Sink Typ. CS R Thermal Resistance, Junction to Ambient JA ©2010 Fairchild Semiconductor Corporation FDP5N50NZF / FDPF5N50NZF Rev. A Description = 2.1A These N-Channel enhancement mode power field effect transis- D tors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to mini- ...

Page 2

... Repetitive Rating: Pulse width limited by maximum junction temperature 18.7mH 4.2A 50V 25, Starting 4.2A, di/dt  200A/s, V  Starting DSS 4. Essentially Independent of Operating Temperature Typical Characteristics FDP5N50NZF / FDPF5N50NZF Rev. A Package Reel Size TO-220 - TO-220F - unless otherwise noted C Test Conditions I = 250 0V, T ...

Page 3

... Drain Current [A] D Figure 5. Capacitance Characteristics 800 ( C iss = shorted C oss = rss = C gd 600 400 *Note 1MHz 200 0 0 Drain-Source Voltage [V] DS FDP5N50NZF / FDPF5N50NZF Rev. A Figure 2. Transfer Characteristics 10 1 *Notes:  1. 250 s Pulse Test 0 Figure 4. Body Diode Forward Voltage 20V GS o *Note: T ...

Page 4

... T , Junction Temperature J Figure 9. Maximum Drain Current Case Temperature [ C Figure 10. Transient Thermal Response Curve-FDPF5N50NZF 4.3 0.5 1 0.2 0.1 0.05 0.02 0.1 0.01 Single pulse 0. FDP5N50NZF / FDPF5N50NZF Rev. A (Continued) Figure 8. Maximum Safe Operating Area 30 10 0.1 *Notes  ...

Page 5

... FDP5N50NZF / FDPF5N50NZF Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... FDP5N50NZF / FDPF5N50NZF Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + • • • I • www.fairchildsemi.com ...

Page 7

... Package Dimensions FDP5N50NZF / FDPF5N50NZF Rev. A TO-220 7 www.fairchildsemi.com ...

Page 8

... Package Dimensions * Front/Back Side Isolation Voltage : 2500V FDP5N50NZF / FDPF5N50NZF Rev. A TO-220F 8 Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. AccuPower™ FRFET Auto-SPM™ Global Power Resource Build it Now™ Green FPS™ CorePLUS™ ...

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