FDPF5N50NZF Fairchild Semiconductor, FDPF5N50NZF Datasheet - Page 4

• Manufacturer Part Number: FDPF5N50NZF
• Description: MOSFET N-CH 500V 4.2A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: UniFET-II™r

Specifications of FDPF5N50NZF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.75 Ohm @ 2.1A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 4.2A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 485pF @ 25V
• Power - Max: 30W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.57 Ohms
• Forward Transconductance Gfs (max / Min): 4.2 S
• Drain-source Breakdown Voltage: 500 V
• Continuous Drain Current: 2.5 A to 4.2 A
• Power Dissipation: 30 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Gate Charge Qg: 9 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP5N50NZF / FDPF5N50NZF Rev. A
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Drain Current
1.15
1.10
1.05
1.00
0.95
0.90
5
4
3
2
1
0
-75 -50
25
T
50
vs. Temperature
J
T
, Junction Temperature
C
, Case Temperature [
0.01
0
4.3
0.1
1
10
Figure 10. Transient Thermal Response Curve-FDPF5N50NZF
75
-5
Single pulse
0.05
0.02
0.01
0.2
0.1
0.5
50
100
10
-4
*Notes:
o
C]
[
1. V
2. I
100
o
C
D
125
GS
]
= 250
10
= 0V
Rectangular Pulse Duration [sec]
-3

A
150
150
(Continued)
10
-2
4
Figure 8. Maximum Safe Operating Area
10
-1
0.01
0.1
30
10
1
1
Operation in This Area
is Limited by R
*Notes:
*Notes:
1. T
2. T
3. Single Pulse
1. Z
2. Duty Factor, D= t
3. T
vs. Case Temperature-FDPF5N50NZF
10
P
C
J
DM

JM
0
JC
= 150
= 25
(t) = 4.1
- T
V
C
DS
o
C
o
= P
C
, Drain-Source Voltage [V]
t
1
10
DS(on)
o
10
DM
t
2
C/W Max.
1
* Z
1

/t
JC
2
(t)
DC
10
10ms
2
100
1ms
100

s
www.fairchildsemi.com
30

1000
s