FDPF5N50NZU Fairchild Semiconductor, FDPF5N50NZU Datasheet

MOSFET N-CH 500V 3.9A TO-220F

FDPF5N50NZU

Manufacturer Part Number
FDPF5N50NZU
Description
MOSFET N-CH 500V 3.9A TO-220F
Manufacturer
Fairchild Semiconductor
Series
UniFET-II™r
Datasheet

Specifications of FDPF5N50NZU

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2 Ohm @ 1.95A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
3.9A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
12nC @ 10V
Input Capacitance (ciss) @ Vds
485pF @ 25V
Power - Max
30W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.7 Ohms
Forward Transconductance Gfs (max / Min)
4.2 S
Drain-source Breakdown Voltage
500 V
Continuous Drain Current
2.3 A to 3.9 A
Power Dissipation
30 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Gate Charge Qg
9 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2010 Fairchild Semiconductor Corporation
FDP5N50NZU / FDPF5N50NZU Rev. A
MOSFET Maximum Ratings
Thermal Characteristics
V
V
I
I
E
I
E
dv/dt
P
T
T
*Drain current limited by maximum junction temperature
R
R
R
D
DM
AR
FDP5N50NZU / FDPF5N50NZU
N-Channel MOSFET
500V, 3.9A, 2.0
Features
• R
• Low Gate Charge ( Typ. 9nC)
• Low C
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Imoroved Capability
• RoHS Compliant
J
L
DSS
GSS
AS
AR
D
JC
CS
JA
, T
Symbol
Symbol
DS(on)
STG
rss
= 1.7 ( Typ.)@ V
G D S
( Typ. 4pF)
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Heat Sink Typ.
Thermal Resistance, Junction to Ambient
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
GS
TO-220
FDP Series
= 10V, I
D
= 1.95A
Parameter
Parameter
T
-Continuous (T
-Continuous (T
- Pulsed
(T
- Derate above 25
C
C
= 25
= 25
G
o
C unless otherwise noted*
o
C)
D
S
C
C
= 25
= 100
o
C
o
C)
o
1
C)
(Note 3)
TO-220F
FDPF Series
(potted)
(Note 1)
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advance technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switching mode power supplies and active power factor
correction.
(Note 2)
( Note 1)
(Note 1)
FDP5N50NZU
FDP5N50NZU
0.62
62.5
3.9
2.3
15
78
1.6
0.5
-55 to +150
G
G
500
±25
135
300
3.9
7.8
20
FDPF5N50NZU
FDPF5N50NZU
0.24
62.5
3.9*
2.3*
15*
4.1
30
UniFET-II
-
February 2010
D
D
S
S
www.fairchildsemi.com
Units
Units
W/
o
V/ns
C/W
mJ
mJ
o
o
W
V
V
A
A
A
C
C
o
C
TM
tm

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FDPF5N50NZU Summary of contents

Page 1

... R Thermal Resistance, Case to Heat Sink Typ. CS R Thermal Resistance, Junction to Ambient JA ©2010 Fairchild Semiconductor Corporation FDP5N50NZU / FDPF5N50NZU Rev. A Description = 1.95A These N-Channel enhancement mode power field effect transis- D tors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to mini- ...

Page 2

... Repetitive Rating: Pulse width limited by maximum junction temperature 18mH 3.9A 50V 25, Starting 3.9A, di/dt  200A/s, V  Starting DSS 4. Essentially Independent of Operating Temperature Typical Characteristics FDP5N50NZU / FDPF5N50NZU Rev. A Package Reel Size TO-220 - TO-220F - unless otherwise noted C Test Conditions I = 250 0V, T ...

Page 3

... Drain Current [A] D Figure 5. Capacitance Characteristics 800 C iss = shorted ( C oss = rss = C gd 600 400 *Note 1MHz 200 0 0 Drain-Source Voltage [V] DS FDP5N50NZU / FDPF5N50NZU Rev. A Figure 2. Transfer Characteristics 10 1 *Notes: 1. 250 s Pulse Test  0 Figure 4. Body Diode Forward Voltage 20V GS o *Note: T ...

Page 4

... Figure 7. Breakdown Voltage Variation vs. Temperature 1.15 1.10 1.05 1.00 0.95 0.90 -75 - Junction Temperature J Figure 9. Maximum Drain Current Case Temperature [˚ Figure 10. Transient Thermal Response Curve-FDPF5N50NZU FDP5N50NZU / FDPF5N50NZU Rev. A (Continued) Figure 8. Maximum Safe Operating Area vs. Case Temperature-FDPF5N50NZU *Notes 250 A  100 150 o C ...

Page 5

... FDP5N50NZU / FDPF5N50NZU Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... FDP5N50NZU / FDPF5N50NZU Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + • • • I • www.fairchildsemi.com ...

Page 7

... Package Dimensions FDP5N50NZU / FDPF5N50NZU Rev. A TO-220 7 www.fairchildsemi.com ...

Page 8

... Package Dimensions * Front/Back Side Isolation Voltage : AC 2500V FDP5N50NZU / FDPF5N50NZU Rev. A TO-220F 8 Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP5N50NZU / FDPF5N50NZU Rev. A FPS™ PowerTrench F-PFS™ PowerXS™ ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ ...

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