FDPF5N50NZU Fairchild Semiconductor, FDPF5N50NZU Datasheet - Page 3
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FDPF5N50NZU
Manufacturer Part Number
FDPF5N50NZU
Description
MOSFET N-CH 500V 3.9A TO-220F
Manufacturer
Fairchild Semiconductor
Series
UniFET-II™r
Datasheet
1.FDPF5N50NZU.pdf
(9 pages)
Specifications of FDPF5N50NZU
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2 Ohm @ 1.95A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
3.9A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
12nC @ 10V
Input Capacitance (ciss) @ Vds
485pF @ 25V
Power - Max
30W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.7 Ohms
Forward Transconductance Gfs (max / Min)
4.2 S
Drain-source Breakdown Voltage
500 V
Continuous Drain Current
2.3 A to 3.9 A
Power Dissipation
30 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Gate Charge Qg
9 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDPF5N50NZU
Manufacturer:
Fairchi/ON
Quantity:
17 402
FDP5N50NZU / FDPF5N50NZU Rev. A
Typical Performance Characteristics
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
Figure 1. On-Region Characteristics
0.03
800
600
400
200
0.1
3.6
3.2
2.8
2.4
2.0
1.6
1.2
10
1
0
0.1
0.1
0
V
C iss = C gs + C gd
C oss = C ds + C gd
C rss = C gd
*Note:
GS
1. V
2. f = 1MHz
=
Drain Current and Gate Voltage
GS
15.0 V
10.0 V
V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
V
2
= 0V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage[V]
I
D
, Drain Current [A]
(
C ds = shorted
V
4
1
1
GS
= 10V
*Notes:
1. 250
2. T
)
6
C
C
C
iss
*Note: T
oss
rss
C
= 25
s Pulse Test
V
GS
o
C
10
8
C
= 20V
10
= 25
o
C
25
10
30
3
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
0.1
10
50
10
10
8
6
4
2
0
1
1
0.4
0
3
V
SD
Variation vs. Source Current
and Temperature
150
2
4
, Body Diode Forward Voltage [V]
Q
V
150
g
GS
o
, Total Gate Charge [nC]
C
, Gate-Source Voltage[V]
V
V
V
o
0.8
C
DS
DS
DS
= 100V
= 250V
= 400V
4
5
-55
*Notes:
25
25
1. V
2. 250
6
o
o
6
o
C
*Notes:
1. V
2. 250
C
C
*Note: I
1.2
DS
GS
= 20V
s Pulse Test
= 0V
s Pulse Test
8
D
7
= 3.9A
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1.6
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