FDPF5N50NZU Fairchild Semiconductor, FDPF5N50NZU Datasheet - Page 2

MOSFET N-CH 500V 3.9A TO-220F

FDPF5N50NZU

Manufacturer Part Number
FDPF5N50NZU
Description
MOSFET N-CH 500V 3.9A TO-220F
Manufacturer
Fairchild Semiconductor
Series
UniFET-II™r
Datasheet

Specifications of FDPF5N50NZU

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2 Ohm @ 1.95A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
3.9A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
12nC @ 10V
Input Capacitance (ciss) @ Vds
485pF @ 25V
Power - Max
30W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.7 Ohms
Forward Transconductance Gfs (max / Min)
4.2 S
Drain-source Breakdown Voltage
500 V
Continuous Drain Current
2.3 A to 3.9 A
Power Dissipation
30 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Gate Charge Qg
9 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
FDP5N50NZU / FDPF5N50NZU Rev. A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 18mH, I
3. I
4. Essentially Independent of Operating Temperature Typical Characteristics
Package Marking and Ordering Information
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
BV
BV
I
I
V
R
g
C
C
C
Q
Q
Q
t
t
t
t
I
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
T
FS
GS(th)
SD
DS(on)
iss
oss
rss
SD
g(tot)
gs
gd
rr
Device Marking
Symbol
DSS
FDPF5N50NZU
FDP5N50NZU
J
3.9A, di/dt  200A/s, V
DSS
AS
= 3.9A, V
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
DD
= 50V, R
DD
 BV
FDPF5N50NZU
FDP5N50NZU
G
DSS
= 25, Starting T
Device
Parameter
, Starting T
J
T
= 25C
C
J
= 25C
= 25
o
C unless otherwise noted
Package
TO-220F
TO-220
I
I
V
V
V
V
V
dI
V
V
V
V
f = 1MHz
V
V
V
V
D
D
DS
DS
GS
DD
GS
GS
GS
GS
GS
DS
DS
DS
GS
F
= 250A, V
= 250A, Referenced to 25
/dt = 100A/s
= 500V, V
= 400V, V
= 0V, I
= ±25V, V
= 20V, I
= 25V, V
= 400V I
= 250V, I
= 10V, R
= 0V, I
= V
= 10V, I
= 10V
DS
Test Conditions
, I
2
SD
SD
D
Reel Size
D
D
D
GS
D
GEN
GS
= 1.95A
= 3.9A
= 3.9A
= 1.95A
GS
GS
DS
= 250A
= 3.9A
= 3.9A
= 0V
= 0V, T
-
-
= 0V
= 0V,T
= 0V
= 25
C
C
= 25
= 125
o
(Note 4)
(Note 4)
(Note 4)
(Note 4)
C
o
C
o
Tape Width
C
-
-
Min.
500
3.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
365
0.5
1.7
4.2
45
33
50
12
19
31
22
4
9
2
4
-
-
-
-
-
-
-
-
Quantity
www.fairchildsemi.com
Max.
250
±10
485
5.0
2.0
3.9
1.6
25
65
12
35
15
50
70
55
8
50
50
-
-
-
-
-
-
-
Units
V/
nC
nC
nC
pF
pF
pF
nC
A
A
ns
ns
ns
ns
ns
A
A
V
V
V
S
o
C

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