FDPF8N50NZU Fairchild Semiconductor, FDPF8N50NZU Datasheet

MOSFET N-CH 500V 6.5A TO-220F

FDPF8N50NZU

Manufacturer Part Number
FDPF8N50NZU
Description
MOSFET N-CH 500V 6.5A TO-220F
Manufacturer
Fairchild Semiconductor
Series
UniFET-II™r
Datasheet

Specifications of FDPF8N50NZU

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.2 Ohm @ 4A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
6.5A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
18nC @ 10V
Input Capacitance (ciss) @ Vds
735pF @ 25V
Power - Max
40W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1 Ohm
Forward Transconductance Gfs (max / Min)
6.3 S
Drain-source Breakdown Voltage
500 V
Continuous Drain Current
3.9 A to 6.5 A
Power Dissipation
40 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Gate Charge Qg
14 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2010 Fairchild Semiconductor Corporation
FDP8N50NZU / FDPF8N50NZU Rev. A
MOSFET Maximum Ratings
Thermal Characteristics
*Drain current limited by maximum junction temperature
V
V
I
I
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
FDP8N50NZU / FDPF8N50NZU
N-Channel MOSFET
500V, 6.5A, 1.2
Features
• R
• Low Gate Charge ( Typ. 14nC)
• Low C
• Fast Switching
• 100% Avalanche Tested
• Improve dv/dt Capability
• ESD Improved Capability
• RoHS Compliant
J
L
DSS
GSS
AS
AR
D
JC
CS
JA
, T
Symbol
Symbol
STG
DS(on)
rss
= 1.0 ( Typ.) @ V
( Typ. 5pF)
G D S
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
GS
TO-220
FDP Series
= 10V, I
D
= 3.25A
T
C
= 25
Parameter
Parameter
-Continuous (T
-Continuous (T
- Pulsed
(T
- Derate above 25
C
o
C unless otherwise noted
= 25
G
D
o
S
C)
C
C
= 25
= 100
1
o
C
TO-220F
FDPF Series
(potted)
o
This N-Channel enhancement mode power field effect transistors
are prod uced using F airchild's pro prietary, planar str ipe, DMOS
technology.
This advance t
minimize on-st ate r esistance, provide super
performance, and withst and high energy pulse in the avalanch e
and commutation mode. The se devices are well suit ed for hig h
efficient switching mode pow er supplies and active p ower factor
correction.
Description
C)
o
C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
echnology ha s been
FDP8N50NZU FDPF8N50NZU
FDP8N50NZU FDPF8N50NZU Units
G
G
130
0.96
62.5
6.5
3.9
26
0.5
1
-55 to +150
500
±25
300
6.5
80
13
20
UniFET-II
especially t ailored to
D
D
S
S
0.32
6.5*
3.9*
26*
62.5
40
3.1
February 2010
www.fairchildsemi.com
-
ior switchin g
Units
W/
o
V/ns
C/W
mJ
mJ
o
o
W
V
V
A
A
A
C
C
o
C
tm
TM

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FDPF8N50NZU Summary of contents

Page 1

... R Thermal Resistance, Case to Sink Typ. CS R Thermal Resistance, Junction to Ambient JA ©2010 Fairchild Semiconductor Corporation FDP8N50NZU / FDPF8N50NZU Rev. A Description = 3.25A This N-Channel enhancement mode power field effect transistors D are prod uced using F airchild's pro prietary, planar str ipe, DMOS technology. This advance t ...

Page 2

... Starting 6.5A, di/dt  200A/s, V  Starting DSS 4. Pulse Test: Pulse width  300s, Duty Cycle  Essentially Independent of Operating Temperature Typical Characteristics FDP8N50NZU / FDPF8N50NZU Rev. A Package Reel Size TO-220 - TO-220F - unless otherwise noted C Test Conditions I = 250 ...

Page 3

... I , Drain Current [A] D Figure 5. Capacitance Characteristics 1200 C iss = oss = oss C rss = C gd 900 C iss 600 300 C rss 0 0 Drain-Source Voltage [V] DS FDP8N50NZU / FDPF8N50NZU Rev. A Figure 2. Transfer Characteristics *Notes:  1. 250 s Pulse Test 0 Figure 4. Body Diode Forward Voltage 100 20V GS o *Note: T ...

Page 4

... Case Temperature Case Temperature [˚C] C  Figure 11. Transient Thermal Response Curve-FDPF8N50NZU  5 0.5 1 0.2 0.1 0.05 0.1 0.02 0.01 Single pulse 0. FDP8N50NZU / FDPF8N50NZU Rev. A (Continued) Figure 8 ...

Page 5

... FDP8N50NZU / FDPF8N50NZU Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... FDP8N50NZU / FDPF8N50NZU Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + • • • I • www.fairchildsemi.com ...

Page 7

... Mechanical Dimensions FDP8N50NZU / FDPF8N50NZU Rev. A TO-220 7 www.fairchildsemi.com ...

Page 8

... Package Dimensions * Front/Back Side Isolation Voltage : AC 2500V FDP8N50NZU / FDPF8N50NZU Rev. A TO-220F 8 Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP8N50NZU / FDPF8N50NZU Rev. A FPS™ PowerTrench F-PFS™ PowerXS™ ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ ...

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