FDPF8N50NZU Fairchild Semiconductor, FDPF8N50NZU Datasheet - Page 4
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FDPF8N50NZU
Manufacturer Part Number
FDPF8N50NZU
Description
MOSFET N-CH 500V 6.5A TO-220F
Manufacturer
Fairchild Semiconductor
Series
UniFET-II™r
Datasheet
1.FDPF8N50NZU.pdf
(9 pages)
Specifications of FDPF8N50NZU
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.2 Ohm @ 4A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
6.5A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
18nC @ 10V
Input Capacitance (ciss) @ Vds
735pF @ 25V
Power - Max
40W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1 Ohm
Forward Transconductance Gfs (max / Min)
6.3 S
Drain-source Breakdown Voltage
500 V
Continuous Drain Current
3.9 A to 6.5 A
Power Dissipation
40 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Gate Charge Qg
14 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDPF8N50NZU
Manufacturer:
Fairchi/ON
Quantity:
17 403
FDP8N50NZU / FDPF8N50NZU Rev. A
Typical Performance Characteristics
vs. Case Temperature
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Drain Current
1.2
1.1
1.0
0.9
0.8
8
7
6
5
4
3
2
1
0
25
-100
50
vs. Temperature
-50
T
J
, Junction Temperature
Figure 11. Transient Thermal Response Curve-FDPF8N50NZU
T
C
, Case Temperature [˚C]
0.01
0.1
75
0
1
5
10
0.5
0.05
0.2
0.02
0.01
Single pulse
-5
0.1
50
100
10
-4
*Notes:
1. V
2. I
[
o
100
C
D
]
GS
125
10
= 250
= 0V
-3
Rectangular Pulse Duration [sec]
A
150
10
150
(Continued)
-2
10
-1
4
Figure 8. Maximum Safe Operating Area
10
10
10
10
10
-1
-2
0
1
0
10
0
*Notes:
P
1. Z
2. Duty Factor, D= t
3. T
DM
? N otes :
1. T
2. T
3. Single Pulse
JM
JC
10
C
J
Operation in This Area
is Limited by R
= 150
= 25
- T
(t) = 3.1
- FDPF8N50NZU
1
o
C
C
o
C
t
1
= P
V
t
2
DS
o
DM
, Drain-Source Voltage [V]
DS(on)
10
C/W Max.
10
1
* Z
2
1
/t
JC
2
(t)
10
DC
3
100 ms
10
10 ms
2
1 ms
100
www.fairchildsemi.com
s
10
s
10
3