FQAF11N90C Fairchild Semiconductor, FQAF11N90C Datasheet - Page 3

• Manufacturer Part Number: FQAF11N90C
• Description: MOSFET N-CH 900V 7A TO-3PF
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQAF11N90C

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.1 Ohm @ 3.5A, 10V
• Drain To Source Voltage (vdss): 900V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 80nC @ 10V
• Input Capacitance (ciss) @ Vds: 3290pF @ 25V
• Power - Max: 120W
• Mounting Type: Through Hole
• Package / Case: TO-3PF-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.1 Ohm @ 10 V
• Drain-source Breakdown Voltage: 900 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 7 A
• Power Dissipation: 120000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2003 Fairchild Semiconductor Corporation
Typical Characteristics
4500
4000
3500
3000
2500
2000
1500
1000
500
10
10
10
0
-1
10
1
0
10
2.5
2.0
1.5
1.0
0.5
-1
Figure 5. Capacitance Characteristics
-1
Figure 3. On-Resistance Variation vs
Top :
Bottom : 5.5 V
0
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
V
GS
5
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
10
10
10
I
D
C
C
0
0
C
, Drain Current [A]
iss
oss
V
rss
GS
= 20V
15
V
GS
= 10V
20
C
C
C
iss
oss
rss
※ Notes :
= C
= C
= C
10
1. 250 μ s Pulse Test
2. T
10
gs
ds
gd
1
※ Note : T
1
+ C
C
+ C
= 25 ℃
※ Notes :
gd
gd
1. V
2. f = 1 MHz
(C
25
ds
GS
J
= shorted)
= 25℃
= 0 V
30
10
10
10
10
10
10
12
10
-1
-1
8
6
4
2
0
1
0
1
0
0.2
2
0
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
Figure 2. Transfer Characteristics
25
Variation with Source Current
10
150
o
0.4
C
150℃
o
C
4
V
V
20
V
Q
and Temperature
GS
SD
DS
G
0.6
, Gate-Source Voltage [V]
, Source-Drain voltage [V]
, Total Gate Charge [nC]
= 720V
V
DS
25℃
V
= 450V
DS
30
= 180V
0.8
6
-55
o
C
40
1.0
※ Notes :
1. V
2. 250 μ s Pulse Test
50
※ Notes :
DS
1. V
2. 250μ s Pulse Test
※ Note : I
8
= 50V
GS
= 0V
1.2
D
60
= 11A
Rev. A, November 2003
10
1.4
70