FQAF11N90C Fairchild Semiconductor, FQAF11N90C Datasheet - Page 7

• Manufacturer Part Number: FQAF11N90C
• Description: MOSFET N-CH 900V 7A TO-3PF
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQAF11N90C

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.1 Ohm @ 3.5A, 10V
• Drain To Source Voltage (vdss): 900V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 80nC @ 10V
• Input Capacitance (ciss) @ Vds: 3290pF @ 25V
• Power - Max: 120W
• Mounting Type: Through Hole
• Package / Case: TO-3PF-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.1 Ohm @ 10 V
• Drain-source Breakdown Voltage: 900 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 7 A
• Power Dissipation: 120000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2003 Fairchild Semiconductor Corporation
Package Dimensions
[5.45
5.45TYP
2.00
2.00
4.00
0.75
+0.20
–0.10
0.30
0.20
0.20
0.20
]
15.50
0.20
TO-3PF
[5.45
2.00
5.45TYP
ø3.60
0.30
0.20
]
0.20
0.85
0.03
0.90
5.50
3.00
Dimensions in Millimeters
(1.50)
2.00
3.30
+0.20
–0.10
0.20
0.20
0.20
0.20
Rev. A, November 2003