FDA59N25 Fairchild Semiconductor, FDA59N25 Datasheet

MOSFET N-CH 250V 59A TO-3P

FDA59N25

Manufacturer Part Number
FDA59N25
Description
MOSFET N-CH 250V 59A TO-3P
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet

Specifications of FDA59N25

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
49 mOhm @ 29.5A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
59A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
82nC @ 10V
Input Capacitance (ciss) @ Vds
4020pF @ 25V
Power - Max
392W
Mounting Type
Through Hole
Package / Case
TO-3PN-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.049 Ohms
Forward Transconductance Gfs (max / Min)
45 S
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
59 A
Power Dissipation
392 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
59A
Drain Source Voltage Vds
250V
On Resistance Rds(on)
49mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
5V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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©2005 Fairchild Semiconductor Corporation
FDA59N25 Rev. A
FDA59N25
250V N-Channel MOSFET
Features
• 59A, 250V, R
• Low gate charge (typical 63 nC)
• Low C
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings
Thermal Characteristics
V
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J,
L
DSS
DS(Avalanche)
GSS
AS
AR
D
Symbol
θJC
θCS
θJA
Symbol
T
STG
rss
(typical 70 pF)
DS(on)
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Drain-Source Voltage
Repetitive Avalanche Voltage
Drain Current
Drain Current
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Operating and Storage Temperature Range
= 0.049Ω @V
G
D
S
GS
= 10 V
Parameter
- Continuous (T
- Continuous (T
- Pulsed
(T
- Derate above 25°C
Parameter
C
TO-3PN
FDA Series
= 25°C)
C
C
= 25°C)
= 100°C)
1
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor
correction.
(Note 1, 2)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
V
V
R
(Note 1)
DS
DS(Avalanche)
DS(on)
= 250V
Typ. @10V = 41mΩ
G
Min.
0.24
--
--
= 300V
FDA59N25
-55 to +150
S
D
1458
39.2
250
300
236
±30
392
300
4.5
3.2
59
35
59
UniFET
Max.
0.32
40
--
September 2005
www.fairchildsemi.com
Unit
W/°C
V/ns
Unit
°C/W
°C/W
°C/W
mJ
mJ
°C
°C
W
V
V
A
A
A
V
A
TM

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FDA59N25 Summary of contents

Page 1

... Thermal Characteristics Symbol R Thermal Resistance, Junction-to-Case θJC R Thermal Resistance, Case-to-Sink θCS R Thermal Resistance, Junction-to-Ambient θJA ©2005 Fairchild Semiconductor Corporation FDA59N25 Rev 250V DS V DS(Avalanche) R DS(on) Description = 10 V These N-Channel enhancement mode power field effect transis- GS tors are produced using Fairchild’s proprietary, planar stripe, DMOS technology ...

Page 2

... DD G ≤ 59A, di/dt ≤ 200A/µs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDA59N25 Rev. A Package Reel Size TO-3PN -- T = 25°C unless otherwise noted C Conditions 250µA ...

Page 3

... GS 0.06 0.03 0. Drain Current [A] D Figure 5. Capacitance Characteristics 8000 6000 C oss C iss 4000 2000 C rss Drain-Source Voltage [V] DS FDA59N25 Rev. A Figure 2. Transfer Characteristics Notes : µ 1. 250 s Pulse Test ° Figure 4. Body Diode Forward Voltage 20V GS ° * Note : 100 125 ...

Page 4

... Figure 9. Maximum Safe Operating Area Operation in This Area is Limited by R DS(on Drain-Source Voltage [V] DS Figure 11. Transient Thermal Response Curve - FDA59N25 Rev. A (Continued) Figure 8. On-Resistance Variation * Notes : µ 250 A D 100 150 200 ° C] Figure 10. Maximum Drain Current µ µ 100 100 ms * Notes : ° ...

Page 5

... 3mA 3mA 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V FDA59N25 Rev. A Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V 300nF 300nF DUT DUT Resistive Switching Test Circuit & Waveforms ...

Page 6

... Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FDA59N25 Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period controlled by pulse period ...

Page 7

... Mechanical Dimensions FDA59N25 Rev. A TO-3PN 7 Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete FDA59N25 Rev. A ISOPLANAR™ PowerSaver™ LittleFET™ PowerTrench MICROCOUPLER™ QFET MicroFET™ QS™ MicroPak™ ...

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