FDA59N25 Fairchild Semiconductor, FDA59N25 Datasheet - Page 4

• Manufacturer Part Number: FDA59N25
• Description: MOSFET N-CH 250V 59A TO-3P
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDA59N25

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 49 mOhm @ 29.5A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 59A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 82nC @ 10V
• Input Capacitance (ciss) @ Vds: 4020pF @ 25V
• Power - Max: 392W
• Mounting Type: Through Hole
• Package / Case: TO-3PN-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.049 Ohms
• Forward Transconductance Gfs (max / Min): 45 S
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 59 A
• Power Dissipation: 392 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 59A
• Drain Source Voltage Vds: 250V
• On Resistance Rds(on): 49mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDA59N25 Rev. A
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
10
10
10
10
10
10
-1
-2
3
2
1
0
10
1.2
1.1
1.0
0.9
0.8
0
-100
vs. Temperature
Operation in This Area
is Limited by R
-50
V
DS(on)
DS
T
J
, Drain-Source Voltage [V]
, Junction Temperature [
10
0
1
50
10
10
DC
Figure 11. Transient Thermal Response Curve
-1
-2
10
100 ms
* Notes :
-5
1. T
2. T
3. Single Pulse
10 ms
100
C
J
D = 0.5
0.01
0.05
0.02
= 150
= 25
1 ms
0.2
0.1
°
10
C]
°
C
°
2
* Notes :
C
100
1. V
2. I
D
10
GS
µ
= 250
10
single pulse
150
s
= 0 V
-4
µ
µ
s
A
t
1
, S q u are W ave P ulse D uration [se c]
200
10
-3
(Continued)
4
10
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
-2
* N otes :
P
1. Z
2. D u ty F actor, D =t
3. T
70
60
50
40
30
20
10
10
DM
0
25
-1
θ
JM
JC
3.0
2.5
2.0
1.5
1.0
0.5
0.0
vs. Temperature
(t) = 0.32
- T
-100
vs. Case Temperature
C
= P
t
1
t
2
D M
°
C /W M ax.
* Z
50
10
-50
1
θ
/t
0
JC
2
(t)
T
C
T
, Case Temperature [
J
, Junction Temperature [
0
75
10
1
50
100
°
C]
100
°
C]
125
* Notes :
www.fairchildsemi.com
1. V
2. I
150
D
GS
= 29.5 A
= 10 V
150
200