PSMN1R7-30YL,115 NXP Semiconductors, PSMN1R7-30YL,115 Datasheet - Page 13

MOSFET N-CH 30V 100A LFPAK

PSMN1R7-30YL,115

Manufacturer Part Number
PSMN1R7-30YL,115
Description
MOSFET N-CH 30V 100A LFPAK
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PSMN1R7-30YL,115

Package / Case
LFPak-4
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1.7 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
2.15V @ 1mA
Gate Charge (qg) @ Vgs
77.9nC @ 10V
Input Capacitance (ciss) @ Vds
5057pF @ 12V
Power - Max
109W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.7 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
100 A
Power Dissipation
109 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-4678-2
934063068115
PSMN1R7-30YL T/R
NXP Semiconductors
8. Revision history
Table 7.
PSMN1R7-30YL
Product data sheet
Document ID
PSMN1R7-30YL_4
Modifications:
PSMN1R7-30YL_3
Revision history
Release date
20100420
20100111
Various changes to content.
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Product data sheet
Rev. 04 — 20 April 2010
N-channel 30 V 1.7 mΩ logic level MOSFET in LFPAK
Change notice
-
-
PSMN1R7-30YL
PSMN1R7-30YL_2
Supersedes
PSMN1R7-30YL_3
© NXP B.V. 2010. All rights reserved.
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