PSMN1R7-30YL,115 NXP Semiconductors, PSMN1R7-30YL,115 Datasheet - Page 15

MOSFET N-CH 30V 100A LFPAK

PSMN1R7-30YL,115

Manufacturer Part Number
PSMN1R7-30YL,115
Description
MOSFET N-CH 30V 100A LFPAK
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PSMN1R7-30YL,115

Package / Case
LFPak-4
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1.7 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
2.15V @ 1mA
Gate Charge (qg) @ Vgs
77.9nC @ 10V
Input Capacitance (ciss) @ Vds
5057pF @ 12V
Power - Max
109W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.7 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
100 A
Power Dissipation
109 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-4678-2
934063068115
PSMN1R7-30YL T/R
NXP Semiconductors
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
10. Contact information
For more information, please visit:
For sales office addresses, please send an email to:
PSMN1R7-30YL
Product data sheet
http://www.nxp.com
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 20 April 2010
salesaddresses@nxp.com
N-channel 30 V 1.7 mΩ logic level MOSFET in LFPAK
9.4
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
Trademarks
PSMN1R7-30YL
© NXP B.V. 2010. All rights reserved.
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