PSMN1R7-30YL,115 NXP Semiconductors, PSMN1R7-30YL,115 Datasheet - Page 2

• Manufacturer Part Number: PSMN1R7-30YL,115
• Description: MOSFET N-CH 30V 100A LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN1R7-30YL,115

• Package / Case: LFPak-4
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.7 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 77.9nC @ 10V
• Input Capacitance (ciss) @ Vds: 5057pF @ 12V
• Power - Max: 109W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.7 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 109 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4678-2; 934063068115; PSMN1R7-30YL T/R

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
PSMN1R7-30YL
Product data sheet
Pin
1
2
3
4
mb
Type number
PSMN1R7-30YL
Symbol Description
S
S
S
G
D
Pinning information
Ordering information
source
source
source
gate
mounting base; connected to
drain
Table 1.
[1]
[2]
[3]
[4]
LFPAK
Package
Name
Symbol
Q
Avalanche ruggedness
E
DS(AL)R
G(tot)
Continuous current is limited by package.
Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
Repetitive avalanche rating limited by average junction temperature of 170 °C.
Refer to application note AN10273 for further information.
Quick reference data
Parameter
total gate charge
repetitive
drain-source
avalanche energy
Description
plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 20 April 2010
Simplified outline
SOT669 (LFPAK)
Conditions
V
V
see
…continued
GS
DS
N-channel 30 V 1.7 mΩ logic level MOSFET in LFPAK
Figure 3
1 2 3 4
= 4.5 V; I
= 12 V; see
mb
D
= 10 A;
Figure 17
Graphic symbol
PSMN1R7-30YL
[2][3][4]
mbb076
G
Min
-
-
© NXP B.V. 2010. All rights reserved.
D
S
Typ
36.2 -
-
Version
Max Unit
-
2 of 16
nC
J