PSMN1R7-30YL,115 NXP Semiconductors, PSMN1R7-30YL,115 Datasheet - Page 8

MOSFET N-CH 30V 100A LFPAK

PSMN1R7-30YL,115

Manufacturer Part Number
PSMN1R7-30YL,115
Description
MOSFET N-CH 30V 100A LFPAK
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PSMN1R7-30YL,115

Package / Case
LFPak-4
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1.7 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
2.15V @ 1mA
Gate Charge (qg) @ Vgs
77.9nC @ 10V
Input Capacitance (ciss) @ Vds
5057pF @ 12V
Power - Max
109W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single Dual Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.7 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
100 A
Power Dissipation
109 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-4678-2
934063068115
PSMN1R7-30YL T/R
NXP Semiconductors
PSMN1R7-30YL
Product data sheet
Fig 8.
Fig 10. Input and reverse transfer capacitances as a
8000
6000
4000
2000
(pF)
(S)
g
C
200
150
100
fs
50
0
0
drain current; typical values
function of gate-source voltage; typical values
Forward transconductance as a function of
2
0
C
C
iss
rss
20
4
40
6
60
8
All information provided in this document is subject to legal disclaimers.
V
003aac452
003aac455
I
GS
D
(A)
(V)
80
10
Rev. 04 — 20 April 2010
N-channel 30 V 1.7 mΩ logic level MOSFET in LFPAK
Fig 9.
Fig 11. Drain-source on-state resistance as a function
R
(mΩ)
DSon
3.0
2.5
2.0
1.5
1.0
(A)
80
60
40
20
I
D
0
function of gate-source voltage; typical values
of gate-source voltage; typical values
Transfer characteristics: drain current as a
2
0
4
1
T
j
= 150 °C
PSMN1R7-30YL
6
2
25 °C
3
8
© NXP B.V. 2010. All rights reserved.
V
003aac453
003aac451
V
GS
GS
(V)
(V)
10
4
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