PSMN1R7-30YL,115 NXP Semiconductors, PSMN1R7-30YL,115 Datasheet - Page 4

• Manufacturer Part Number: PSMN1R7-30YL,115
• Description: MOSFET N-CH 30V 100A LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN1R7-30YL,115

• Package / Case: LFPak-4
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.7 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 77.9nC @ 10V
• Input Capacitance (ciss) @ Vds: 5057pF @ 12V
• Power - Max: 109W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.7 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 109 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4678-2; 934063068115; PSMN1R7-30YL T/R

NXP Semiconductors
PSMN1R7-30YL
Product data sheet
Fig 1.
Fig 3.
(A)
I
D
120
100
80
60
40
20
0
mounting base temperature
Continuous drain current as a function of
Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time
0
50
(1)
100
10
10
10
(A)
I
AL
10
150
-1
3
2
1
10
All information provided in this document is subject to legal disclaimers.
-3
T
003aac446
mb
(°C)
200
10
Rev. 04 — 20 April 2010
-2
10
N-channel 30 V 1.7 mΩ logic level MOSFET in LFPAK
-1
Fig 2.
P
(%)
der
120
80
40
0
1
function of mounting base temperature
Normalized total power dissipation as a
0
(2)
(1)
(3)
t
AL
003aac266
(ms)
10
50
PSMN1R7-30YL
100
150
© NXP B.V. 2010. All rights reserved.
T
mb
03aa16
(°C)
200
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