PSMN1R7-30YL,115 NXP Semiconductors, PSMN1R7-30YL,115 Datasheet - Page 3

• Manufacturer Part Number: PSMN1R7-30YL,115
• Description: MOSFET N-CH 30V 100A LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN1R7-30YL,115

• Package / Case: LFPak-4
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.7 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 77.9nC @ 10V
• Input Capacitance (ciss) @ Vds: 5057pF @ 12V
• Power - Max: 109W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.7 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 109 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4678-2; 934063068115; PSMN1R7-30YL T/R

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
[4]
PSMN1R7-30YL
Product data sheet
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
E
D
DM
S
SM
stg
j
DS
DGR
GS
tot
DS(AL)R
DS(AL)S
Continuous current is limited by package.
Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
Repetitive avalanche rating limited by average junction temperature of 170 °C.
Refer to application note AN10273 for further information.
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
repetitive drain-source
avalanche energy
non-repetitive
drain-source
avalanche energy
Conditions
T
T
V
V
t
see
T
T
t
see
V
V
All information provided in this document is subject to legal disclaimers.
p
p
j
j
mb
mb
GS
GS
GS
sup
≤ 10 µs; pulsed; T
≤ 10 µs; pulsed; T
≥ 25 °C; T
≥ 25 °C; T
Figure 4
Figure 3
= 25 °C; see
= 25 °C
= 10 V; T
= 10 V; T
= 10 V; T
≤ 30 V; R
Rev. 04 — 20 April 2010
j
j
≤ 175 °C
≤ 175 °C; R
mb
mb
j(init)
GS
= 100 °C; see
= 25 °C; see
= 50 Ω; unclamped
Figure 2
= 25 °C; I
N-channel 30 V 1.7 mΩ logic level MOSFET in LFPAK
mb
mb
= 25 °C;
= 25 °C
GS
D
= 20 kΩ
= 100 A;
Figure 1
Figure 1
[1]
[1]
[1]
[2][3][4]
PSMN1R7-30YL
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
© NXP B.V. 2010. All rights reserved.
175
Max
30
30
20
100
100
790
109
175
100
790
-
241
Unit
V
V
V
A
A
A
W
°C
°C
A
A
J
mJ
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