PSMN1R7-30YL,115 NXP Semiconductors, PSMN1R7-30YL,115 Datasheet - Page 7

• Manufacturer Part Number: PSMN1R7-30YL,115
• Description: MOSFET N-CH 30V 100A LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN1R7-30YL,115

• Package / Case: LFPak-4
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.7 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 77.9nC @ 10V
• Input Capacitance (ciss) @ Vds: 5057pF @ 12V
• Power - Max: 109W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.7 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 109 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4678-2; 934063068115; PSMN1R7-30YL T/R

NXP Semiconductors
Table 6.
Tested to JEDEC standards where applicable.
PSMN1R7-30YL
Product data sheet
Symbol
t
t
t
t
Source-drain diode
V
t
Q
d(on)
r
d(off)
f
rr
Fig 6.
SD
r
(A)
I
300
250
200
150
100
D
50
0
function of drain-source voltage; typical values
Output characteristics: drain current as a
0
10
Characteristics
4
3.6
3.4
Parameter
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
reverse recovery time
recovered charge
2
4
…continued
V
GS
6
(V) = 3.2
2.4
3
2.8
2.6
2.2
Conditions
V
R
I
see
I
V
All information provided in this document is subject to legal disclaimers.
S
S
8
DS
DS
003aac449
G(ext)
V
= 25 A; V
= 20 A; dI
DS
Figure 20
= 12 V; R
= 20 V
(V)
= 4.7 Ω
10
Rev. 04 — 20 April 2010
GS
S
/dt = -100 A/µs; V
L
= 0 V; T
= 0.5 Ω; V
N-channel 30 V 1.7 mΩ logic level MOSFET in LFPAK
Fig 7.
j
= 25 °C;
GS
R
(mΩ)
DSon
= 4.5 V;
5
4
3
2
1
of drain current; typical values
Drain-source on-state resistance as a function
GS
0
= 0 V;
50
PSMN1R7-30YL
100
Min
-
-
-
-
-
-
-
150
V
GS
Typ
46
72
76
34
0.78
45
56
(V) = 3.4
200
© NXP B.V. 2010. All rights reserved.
003aac450
I
D
-
3.6
Max
-
-
-
1.2
-
-
10
(A)
7
4
250
Unit
ns
ns
ns
ns
V
ns
nC
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