AO4409 Alpha & Omega Semiconductor Inc, AO4409 Datasheet

MOSFET P-CH -30V -15A 8-SOIC

AO4409

Manufacturer Part Number
AO4409
Description
MOSFET P-CH -30V -15A 8-SOIC
Manufacturer
Alpha & Omega Semiconductor Inc
Datasheet

Specifications of AO4409

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
7.5 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
15A
Vgs(th) (max) @ Id
2.7V @ 250µA
Gate Charge (qg) @ Vgs
120nC @ 10V
Input Capacitance (ciss) @ Vds
6400pF @ 15V
Power - Max
3W
Mounting Type
Surface Mount
Package / Case
8-SOIC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
785-1023-2

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Company
Part Number
Manufacturer
Quantity
Price
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AO4409
Manufacturer:
AO
Quantity:
40 000
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Part Number:
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Part Number:
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Manufacturer:
AOS/万代
Quantity:
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Rev 7: Feb. 2011
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
Avalanche energy L=0.3mH
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
The AO4409 uses advanced trench technology to provide
excellent R
device is suitable for use as a load switch or in PWM
applications.
General Description
D
DS(ON)
D
D
Top View
, and ultra-low low gate charge. This
B
C
D
C
T
T
T
T
A
A
A
A
S
=25° C
=70° C
=25° C
=70° C
S
C
SOIC-8
S
A
A D
A
=25° C unless otherwise noted
G
t ≤ 10s
Steady-State
Steady-State
Bottom View
Symbol
V
V
I
I
I
E
P
T
Symbol
www.aosmd.com
D
DM
AS
J
DS
GS
AS
D
, T
, I
R
R
, E
AR
STG
JA
JL
AR
V
I
R
R
100% UIS Tested
100% R
Product Summary
D
DS
DS(ON)
DS(ON)
(at V
Typ
31
59
16
(at V
(at V
GS
g
=-10V)
Tested
GS
GS
Maximum
-55 to 150
=-10V)
=-4.5V)
-12.8
±20
135
-30
-15
-80
3.1
30
2
30V P-Channel MOSFET
G
Max
40
75
24
D
S
-30V
-15A
< 7.5m
< 12m
AO4409
Units
Units
° C/W
° C/W
° C/W
Page 1 of 5
mJ
° C
W
V
V
A
A

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AO4409 Summary of contents

Page 1

... General Description The AO4409 uses advanced trench technology to provide excellent R , and ultra-low low gate charge. This DS(ON) device is suitable for use as a load switch or in PWM applications. SOIC-8 Top View Absolute Maximum Ratings T =25° C unless otherwise noted A Parameter Drain-Source Voltage ...

Page 2

... FR-4 board with 2oz. Copper still air environment with T =150° C, using ≤ 10s junction-to-ambient thermal resistance. =150° C. Ratings are based on low frequency and duty cycles to keep J(MAX) and lead to ambient. JL =150° C. The SOA curve provides a single pulse ratin g. J(MAX) www.aosmd.com AO4409 Min Typ Max Units - =55° C ...

Page 3

... I =-15A D 1.4 1 Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 I =-15A D 1.0E+01 40 1.0E+00 125° C 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0 Figure 6: Body-Diode Characteristics (Note E) www.aosmd.com AO4409 125° C 25° 1.5 2 2 (Volts =-10V =-4. 100 125 150 175 0 Temperature (° (Note E) 125° ...

Page 4

... 100 0.00001 Figure 10: Single Pulse Power Rating Junction-to- In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.01 0.1 1 Pulse Width (s) www.aosmd.com AO4409 C iss C oss (Volts) DS Figure 8: Capacitance Characteristics T =25° 0.001 0.1 10 1000 ...

Page 5

... Resistive Switching Test Circuit & Waveforms d(on) Vgs r - DUT Vdd VDC + Vds 1 Vds - Vgs Vdd VDC Id + Vgs Diode Recovery Test Circuit & Waveforms Vgs -Isd -I + Vdd VDC - -Vds www.aosmd.com AO4409 Qg Qgs Qgd Charge t off t t d(off) f 90% 10% BV DSS Idt dI/ Vdd Page ...

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