AO4409 Alpha & Omega Semiconductor Inc, AO4409 Datasheet - Page 3

• Manufacturer Part Number: AO4409
• Description: MOSFET P-CH -30V -15A 8-SOIC
• Manufacturer: Alpha & Omega Semiconductor Inc

Specifications of AO4409

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7.5 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 2.7V @ 250µA
• Gate Charge (qg) @ Vgs: 120nC @ 10V
• Input Capacitance (ciss) @ Vds: 6400pF @ 15V
• Power - Max: 3W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 785-1023-2

Rev 7: Feb. 2011
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
50
40
30
20
10
0
12
10
20
15
10
8
6
4
2
5
0
0
Figure 3: On-Resistance vs. Drain Current and Gate
0
2
Figure 5: On-Resistance vs. Gate-Source Voltage
Fig 1: On-Region Characteristics (Note E)
25° C
1
5
4
-10V
-6V
-4V
-4.5V
V
V
Voltage (Note E)
GS
GS
=-4.5V
10
2
-V
=-10V
-V
DS
(Note E)
-I
GS
D
(Volts)
(Volts)
(A)
6
15
3
125° C
V
8
GS
20
I
=-3V
4
D
-3.5V
=-15A
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25
10
5
60
50
40
30
20
10
1.6
1.4
1.2
0.8
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
0
1
0
0
Figure 4: On-Resistance vs. Junction Temperature
40
I
D
V
Figure 2: Transfer Characteristics (Note E)
=-15A
0.0
0.5
DS
Figure 6: Body-Diode Characteristics (Note E)
25
=-5V
125° C
1
0.2
50
Temperature (° C)
1.5
V
-V
0.4
GS
75
(Note E)
GS
=-10V
125° C
-V
(Volts)
2
SD
100
0.6
(Volts)
2.5
25° C
V
GS
125
0.8
=-4.5V
3
17
10
18
25° C
150
3.5
5
2
0
1.0
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AO4409
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1.2