IPP12CN10L G Infineon Technologies, IPP12CN10L G Datasheet
IPP12CN10L G
Specifications of IPP12CN10L G
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IPP12CN10L G Summary of contents
Page 1
... PG-TO251-3-11 12CN10L Symbol Conditions I T =25 ° =100 ° =25 °C D,pulse C =25 Ω = = = /dt di /dt =100 A/µs, T =175 °C j,max =25 °C tot stg <-5V gs page 1 IPS12CN10L G IPP12CN10L G 100 V 12 mΩ Value Unit 276 150 mJ 6 kV/µs ±20 V 125 W -55 ... 175 °C 55/175/56 2008-07-15 ...
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... GSS =4 =34 DS(on) (TO220 (TO220 =34 (TO251 (TO251 |>2 DS(on)max = (one layer, 70 µm thick) copper area for drain page 2 IPS12CN10L G IPP12CN10L G Values Unit min. typ. max 1.2 K 100 - - V 1.2 1.84 2.4 - 0.1 1 µ 100 - 1 100 nA - 11.7 15.8 mΩ 11.7 15.8 - 9.9 11.8 Ω ...
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... See figure 16 for gate charge parameter definition Rev. 1.02 Symbol Conditions C iss = oss f =1 MHz C rss t d( =1.6 Ω I =34 d(off = = plateau oss =25 ° S,pulse = =25 ° = /dt =100 A/µ page 3 IPS12CN10L G IPP12CN10L G Values Unit min. typ. max. - 4210 5600 pF - 528 702 - 3 276 - 1 1 101 - ns - 193 - nC 2008-07-15 ...
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... V Rev. 1.02 2 Drain current I =f 100 150 200 0 [° Max. transient thermal impedance Z =f(t thJC p parameter µs 10 µs 100 µ [V] DS page 4 IPS12CN10L G IPP12CN10L G ≥ 100 150 T [° 0.5 0.2 0.1 0.05 0.02 0.01 single pulse - [s] p 200 0 10 2008-07-15 ...
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... Typ. transfer characteristics I =f |>2 DS(on)max parameter 150 100 50 175 ° Rev. 1.02 6 Typ. drain-source on resistance R =f(I DS(on) parameter 6 [ Typ. forward transconductance g =f 160 140 120 100 ° [V] GS page 5 IPS12CN10L G IPP12CN10L =25 ° 4 [A] D =25 ° 100 120 I [A] D 100 140 2008-07-15 ...
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... Typ. gate threshold voltage V =f(T GS(th) parameter: I 2.5 2 1.5 1 typ 0 100 140 180 -60 [° Forward characteristics of reverse diode I =f parameter [V] DS page 6 IPS12CN10L G IPP12CN10L 830 µA 83 µA - 100 140 T [° 175 °C, 98% 25 °C, 98% 25 °C 175 °C 0.5 1 1.5 V [V] SD 180 2 2008-07-15 ...
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... Drain-source breakdown voltage V =f BR(DSS 115 110 105 100 95 90 -60 - Rev. 1.02 14 Typ. gate charge V =f(Q GS gate parameter °C 100 ° 100 1000 0 [µs] 16 Gate charge waveforms s(th) Q g(th) 60 100 140 180 [°C] j page 7 IPS12CN10L G IPP12CN10L =69 A pulsed [nC] gate ate 2008-07-15 ...
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... PG-TO220-3: Outline Rev. 1.02 page 8 IPS12CN10L G IPP12CN10L G 2008-07-15 ...
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... Rev. 1.02 page 9 IPS12CN10L G IPP12CN10L G 2008-07-15 ...
Page 10
... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.02 page 10 IPS12CN10L G IPP12CN10L G 2008-07-15 ...