IPP12CN10L G Infineon Technologies, IPP12CN10L G Datasheet - Page 2
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IPP12CN10L G
Manufacturer Part Number
IPP12CN10L G
Description
MOSFET N-CH 100V 69A TO220-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPP12CN10L_G.pdf
(10 pages)
Specifications of IPP12CN10L G
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
12 mOhm @ 69A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
69A
Vgs(th) (max) @ Id
2.4V @ 83µA
Gate Charge (qg) @ Vgs
58nC @ 10V
Input Capacitance (ciss) @ Vds
5600pF @ 50V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
On Resistance Rds(on)
9.9mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To +175°C
Configuration
Single
Resistance Drain-source Rds (on)
0.012 Ohms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
69 A
Power Dissipation
125 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000308792
Rev. 1.02
4)
connection. PCB is vertical in still air.
Parameter
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction -
ambient
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
j
=25 °C, unless otherwise specified
Symbol Conditions
R
R
V
V
I
I
R
R
g
DSS
GSS
fs
(BR)DSS
GS(th)
thJC
thJA
DS(on)
G
minimal footprint
6 cm2 cooling area
V
V
V
T
V
T
V
V
(TO220)
V
(TO220)
V
(TO251)
V
(TO251)
|V
I
D
page 2
j
j
GS
DS
DS
DS
GS
GS
GS
GS
GS
=25 °C
=125 °C
=69 A
DS
=V
=80 V, V
=80 V, V
=0 V, I
=20 V, V
=4.5 V, I
=10 V, I
=4.5 V, I
=10 V, I
|>2|I
GS
, I
D
2
|R
D
(one layer, 70 µm thick) copper area for drain
D
=1 mA
D
D
=83 µA
D
D
GS
GS
DS
DS(on)max
=69 A,
=69 A,
=34.5 A,
=34.5 A,
=0 V,
=0 V,
=0 V
4)
,
min.
100
1.2
57
-
-
-
-
-
-
-
-
-
-
-
Values
1.84
11.7
11.7
typ.
113
0.1
9.9
9.9
1.3
10
1
-
-
-
-
IPS12CN10L G
IPP12CN10L G
max.
15.8
15.8
11.8
100
100
1.2
2.4
62
40
12
1
-
-
-
Unit
K/W
V
µA
nA
mΩ
Ω
S
2008-07-15