IPP12CN10L G Infineon Technologies, IPP12CN10L G Datasheet - Page 6
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IPP12CN10L G
Manufacturer Part Number
IPP12CN10L G
Description
MOSFET N-CH 100V 69A TO220-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPP12CN10L_G.pdf
(10 pages)
Specifications of IPP12CN10L G
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
12 mOhm @ 69A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
69A
Vgs(th) (max) @ Id
2.4V @ 83µA
Gate Charge (qg) @ Vgs
58nC @ 10V
Input Capacitance (ciss) @ Vds
5600pF @ 50V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
On Resistance Rds(on)
9.9mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To +175°C
Configuration
Single
Resistance Drain-source Rds (on)
0.012 Ohms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
69 A
Power Dissipation
125 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000308792
Rev. 1.02
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10
10
10
10
30
25
20
15
10
DS
=f(T
5
0
4
3
2
1
-60
); V
0
j
); I
GS
D
=0 V; f =1 MHz
-20
=69 A; V
20
20
Crss
Coss
GS
98 %
Ciss
V
=10 V
T
DS
j
60
40
[°C]
[V]
typ
100
60
140
180
page 6
80
10 Typ. gate threshold voltage
V
parameter: I
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
2.5
1.5
0.5
10
10
10
10
=f(T
SD
2
1
0
3
2
1
0
-60
)
0
j
); V
D
j
175 °C, 98%
GS
-20
175 °C
=V
0.5
DS
20
83 µA
V
T
SD
j
60
[°C]
1
25 °C
[V]
830 µA
25 °C, 98%
100
IPS12CN10L G
IPP12CN10L G
1.5
140
2008-07-15
180
2